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RQ3E080GNTB

N-Channel 30 V 8A (Ta) 2W (Ta), 15W (Tc) Surface Mount 8-HSMT (3.2x3)

Quantity Unit Price(USD) Ext. Price
1 $0.307 $0.31
200 $0.123 $24.60
500 $0.119 $59.50
1000 $0.117 $117.00

Inventory:6,915

*The price is for reference only.
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Quick Inquiry

Please submit RFQ for RQ3E080GNTB or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of RQ3E080GNTB

Power Field-Effect Transistor, 8A I(D), 30V, 0.0228ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSMT8, 8 PIN

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 16.7mOhm @ 8A, 10V Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 5.8 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 295 pF @ 15 V Power Dissipation (Max) 2W (Ta), 15W (Tc)
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package 8-HSMT (3.2x3) Package / Case 8-PowerVDFN
Base Product Number RQ3E080

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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