RQ3E080BNTB
Nch 30V 15A Power MOSFET
Inventory:6,822
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Part Number : RQ3E080BNTB
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Package/Case : HSMT-8
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Brands : Rohm Semiconductor
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Components Categories : Single FETs, MOSFETs
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Datesheet : RQ3E080BNTB DataSheet (PDF)
Overview of RQ3E080BNTB
Power Field-Effect Transistor, 8A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, HSMT8, 8 PIN
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Status | Active | FET Type | N-Channel |
Technology | Si | Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 8A (Ta) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 15.2mOhm @ 8A, 10V | Vgs(th) (Max) @ Id | 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 15 V | Power Dissipation (Max) | 2W (Ta) |
Operating Temperature | 150°C (TJ) | Mounting Type | Surface Mount |
Supplier Device Package | 8-HSMT (3.2x3) | Package / Case | HSMT-8 |
Base Product Number | RQ3E080 | Manufacturer | ROHM Semiconductor |
Product Category | MOSFET | RoHS | Details |
REACH | Details | Mounting Style | SMD/SMT |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 8 A |
Rds On - Drain-Source Resistance | 11 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.5 V | Qg - Gate Charge | 14.5 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 2 W | Channel Mode | Enhancement |
Brand | ROHM Semiconductor | Configuration | Single |
Fall Time | 7 ns | Product Type | MOSFET |
Rise Time | 20 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 N-channel |
Part # Aliases | RQ3E080BN |
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