RN1102,LF(CT
Trans Digital BJT NPN 50V 100mA 100mW 3-Pin SSM T/R
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Part Number : RN1102,LF(CT
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Package/Case : SOT416-3
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Brands : Toshiba Semiconductor And Storage
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Components Categories : Single, Pre-Biased Bipolar Transistors
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Datesheet : RN1102,LF(CT DataSheet (PDF)
Overview of RN1102,LF(CT
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SSM
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category | Digital Transistors | RoHS | Details |
| Transistor Polarity | NPN | Typical Input Resistor | 10 kOhms |
| Typical Resistor Ratio | 1 | Mounting Style | SMD/SMT |
| Package / Case | SOT-416-3 | DC Collector/Base Gain hfe Min | 30 |
| Collector- Emitter Voltage VCEO Max | 50 V | Continuous Collector Current | 100 mA |
| Pd - Power Dissipation | 100 mW | Series | RN1102 |
| Brand | Toshiba | Emitter- Base Voltage VEBO | 10 V |
| Product Type | Digital Transistors | Factory Pack Quantity | 3000 |
| Subcategory | Transistors | Unit Weight | 0.000212 oz |
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Warranty, Returns, and Additional Information
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