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OPA2365AIDR

2.2V, 50MHz operational amplifier with low noise and single-supply rail-to-rail capabilities

Quantity Unit Price(USD) Ext. Price
1 $1.314 $1.31
10 $1.117 $11.17
30 $1.006 $30.18
100 $0.798 $79.80
500 $0.744 $372.00
1000 $0.719 $719.00

Inventory:7,664

*The price is for reference only.
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  • Part Number : OPA2365AIDR

  • Package/Case : SOIC (D)-8

  • Brands : TI

  • Components Categories : High-speed op amps (GBW ≥ 50 MHz)

  • Datesheet : OPA2365AIDR DataSheet (PDF)

Quick Inquiry

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Overview of OPA2365AIDR

The OPA2365AIDR is a high-precision, low-power operational amplifier manufactured by Texas Instruments. It is housed in an SOIC-8 package and operates on a supply voltage range of 2.7V to 5.5V. This amplifier is designed for applications requiring low input offset voltage and low noise, making it suitable for precision instrumentation and sensor interfaces.The OPA2365AIDR offers a low input bias current of 1pA, ensuring minimal errors in high-impedance sensor signal conditioning circuits. It has a unity-gain bandwidth of 10MHz and a slew rate of 6V/μs, providing high-speed and accurate signal amplification. The amplifier also features a low supply current of 160μA per channel, making it ideal for battery-powered applications.Additionally, the OPA2365AIDR has a wide operating temperature range of -40°C to 125°C, allowing for use in harsh environments.

Key Features

  • OPA2365AIDR is a low-power, precision operational amplifier
  • It has a low input offset voltage and drift for accurate measurements
  • Offers high input impedance and low input bias current for minimal signal distortion
  • Rail-to-rail output swing allows for maximum dynamic range
  • Small package size and low power consumption make it suitable for portable and battery-powered devices
  • Application

  • The OPA2365AIDR is a precision dual operational amplifier ideally suited for precision instrumentation, data acquisition systems, and high-density applications
  • It is commonly used in audio signal processing, transducer systems, and industrial control systems due to its low offset voltage, low noise, and low power consumption characteristics
  • Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Architecture FET / CMOS Input, Voltage FB Number of channels 2
    Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 2.2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 5.5
    GBW (typ) (MHz) 50 BW at Acl (MHz) 50
    Acl, min spec gain (V/V) 1 Slew rate (typ) (V/µs) 25
    Vn at flatband (typ) (nV√Hz) 4.5 Vn at 1 kHz (typ) (nV√Hz) 4.5
    Iq per channel (typ) (mA) 4.6 Vos (offset voltage at 25°C) (max) (mV) 0.2
    Rail-to-rail In, Out Features Zero Crossover
    Rating Catalog Operating temperature range (°C) -40 to 125
    CMRR (typ) (dB) 120 Input bias current (max) (pA) 10
    Offset drift (typ) (µV/°C) 1 Iout (typ) (mA) 65

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