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NVTFS6H850NTAG

Trans MOSFET N-CH 80V 11A Automotive 8-Pin WDFN EP T/R

Inventory:5,535

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Overview of NVTFS6H850NTAG

The NVTFS6H850NTAG is a highly efficient Automotive Power MOSFET that is perfect for compact design solutions in automotive applications. With a 3x3mm flat lead package, this MOSFET offers high thermal performance, making it ideal for use in harsh operating conditions. Additionally, the Wettable Flank Option allows for enhanced optical inspection, ensuring quality and reliability in every design

Key Features

  • Small Footprint (3.3 x 3.3 mm)
  • Low RDS (ON)
  • Low QG and Capacitance
  • Wettable Flank Option
  • AEC−Q101 Qualified and PPAP Capable
  • RoHS Compliant

Application

  • Switching Power Supplies
  • Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
  • 48 V Systems

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category MOSFET
Technology Si Mounting Style SMD/SMT
Package / Case WDFN-8 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 80 V
Id - Continuous Drain Current 68 A Rds On - Drain-Source Resistance 8.5 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 19 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 107 W
Channel Mode Enhancement Qualification AEC-Q101
Series NVTFS6H850N Brand onsemi
Configuration Single Fall Time 8 ns
Forward Transconductance - Min 63 S Product Type MOSFET
Rise Time 32 ns Factory Pack Quantity 1500
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 34 ns Typical Turn-On Delay Time 11 ns
Unit Weight 0.001043 oz

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