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NVMFS5C460NLAFT1G

Non-Volatile Memory Field-Effect Transistor

Inventory:7,273

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Please submit RFQ for NVMFS5C460NLAFT1G or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of NVMFS5C460NLAFT1G

One of the standout features of this MOSFET is the Wettable Flank Option, which enhances optical inspection capabilities for improved quality control. This advanced feature sets it apart from standard power MOSFETs and showcases its commitment to innovation and performance excellence. AEC-Q101 qualification and PPAP capability further attest to its suitability for automotive applications

Key Features

  • Small Footprint (5x6 mm)
  • Low RDS(on)
  • Low QG and Capacitance
  • Wettable Flank Option
  • AEC−Q101 Qualified
  • RoHS Compliant

Application

  • Reverse Battery protection
  • Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
  • Switching power supplies

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SO-8FL / DFN-5 Case Outline 488AA
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 1500
ON Target Y Channel Polarity N-Channel
Configuration Single V(BR)DSS Min (V) 40
VGS Max (V) 20 VGS(th) Max (V) 2
ID Max (A) 78 PD Max (W) 50
RDS(on) Max @ VGS = 2.5 V (mΩ) ~NA~ RDS(on) Max @ VGS = 4.5 V (mΩ) 7.2
RDS(on) Max @ VGS = 10 V (mΩ) 4.5 Qg Typ @ VGS = 4.5 V (nC) 11
Qg Typ @ VGS = 10 V (nC) 23 Ciss Typ (pF) 1300
Pricing ($/Unit) $0.584

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Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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