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NDP6060L

Trans MOSFET N-CH 60V 48A 3-Pin(3+Tab) TO-220 Tube

Quantity Unit Price(USD) Ext. Price
1 $1.679 $1.68
10 $1.460 $14.60
50 $1.323 $66.15
100 $1.183 $118.30
500 $1.119 $559.50
800 $1.092 $873.60

Inventory:7,673

*The price is for reference only.
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  • Part Number : NDP6060L

  • Package/Case : TO-220-3

  • Brands : onsemi

  • Components Categories : Single FETs, MOSFETs

  • Datesheet : NDP6060L DataSheet (PDF)

Quick Inquiry

Please submit RFQ for NDP6060L or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of NDP6060L

These logic level N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Key Features

  • 48A, 60V. RDS(ON) = 0.025Ω @ VGS = 5V.
  • Low drive requirements allowing operation directly from logic drivers. VGS(TH) < 2.0V.
  • Critical DC electrical parameters specified at elevated temperature.
  • Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
  • 175°C maximum junction temperature rating.
  • High density cell design for extremely low RDS(ON).
  • TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.

Application

  • This product is general usage and suitable for many different applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category MOSFET
RoHS Details Technology Si
Mounting Style Through Hole Package / Case TO-220-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 48 A
Rds On - Drain-Source Resistance 25 mOhms Vgs - Gate-Source Voltage - 16 V, + 16 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge 60 nC
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 100 W Channel Mode Enhancement
Series NDP6060L Brand onsemi / Fairchild
Configuration Single Fall Time 161 ns
Height 16.3 mm Length 10.67 mm
Product Type MOSFET Rise Time 320 ns
Factory Pack Quantity 50 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 49 ns Typical Turn-On Delay Time 15 ns
Width 4.7 mm Part # Aliases NDP6060L_NL
Unit Weight 0.068784 oz

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Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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