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MRF101AN

Wideband RF Power LDMOS Transistor, 100 W CW over 1.8-250 MHz, 50 V

Inventory:8,460

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Overview of MRF101AN

RF Mosfet 50 V 100 mA 1.8MHz ~ 250MHz 21.1dB 115W TO-220-3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer NXP Product Category RF MOSFET Transistors
RoHS Details Transistor Polarity N-Channel
Technology Si Id - Continuous Drain Current 8.8 A
Vds - Drain-Source Breakdown Voltage 133 V Rds On - Drain-Source Resistance -
Operating Frequency 1.8 MHz to 250 MHz Gain 21.1 dB
Output Power 100 W Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 150 C Mounting Style Through Hole
Package / Case TO-220-3 Brand NXP Semiconductors
Forward Transconductance - Min 7.1 S Number of Channels 1 Channel
Pd - Power Dissipation 182 W Product Type RF MOSFET Transistors
Series MRF101AN Factory Pack Quantity 50
Subcategory MOSFETs Transistor Type LDMOS FET
Type RF Power MOSFET Vgs - Gate-Source Voltage - 6 V, + 10 V
Vgs th - Gate-Source Threshold Voltage 1.7 V Part # Aliases 935377233129
Unit Weight 0.002116 oz

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