MMBF170-7-F
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
20 | $0.024 | $0.48 |
200 | $0.020 | $4.00 |
600 | $0.018 | $10.80 |
3000 | $0.017 | $51.00 |
9000 | $0.017 | $153.00 |
21000 | $0.017 | $357.00 |
Inventory:6,571
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : MMBF170-7-F
-
Package/Case : SOT23-3
-
Brands : DIODES
-
Components Categories : Single FETs, MOSFETs
-
Datesheet : MMBF170-7-F DataSheet (PDF)
Overview of MMBF170-7-F
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 500 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 5.3 / Gate-Source Voltage V = 20 / Turn-OFF Delay Time ns = 10 / Turn-ON Delay Time ns = 10 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 300
Key Features
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 200 mA | Rds On - Drain-Source Resistance | 5 Ohms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 800 mV |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 300 mW | Channel Mode | Enhancement |
Series | MMBF170 | Brand | Diodes Incorporated |
Configuration | Single | Forward Transconductance - Min | 80 mS |
Height | 1 mm | Length | 2.9 mm |
Product | MOSFET Small Signals | Product Type | MOSFET |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | Enhancement Mode Field Effect Transistor |
Typical Turn-Off Delay Time | 10 ns | Typical Turn-On Delay Time | 10 ns |
Width | 1.3 mm | Unit Weight | 0.000282 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
Similar Product
MMBT3904-7-F
-Element Bipolar Transistor
FMMT458TA
Describing FMMT458TA
MMBT4401-7-F
Trans GP BJT NPN 40V 0.6A 350mW 3-Pin SOT-23 T/R
MMBT2222A-7-F
Bipolar Transistors - BJT 40V 300mW
MMBTA06-7-F
Trans GP BJT NPN 80V 0.5A 350mW 3-Pin SOT-23 T/R
FMMT617TA
Trans GP BJT NPN 15V 3A 806mW 3-Pin SOT-23 T/R
FMMT593TA
Trans GP BJT PNP 100V 1A 500mW 3-Pin SOT-23 T/R
DMMT3906W-7-F
MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR