MB85RC256VPNF-G-JNE1

The MB85RC256VPNF-G-JNE1 is a non-volatile ferroelectric random access memory (FRAM) module manufactured by Fujitsu Electronics. It has a storage capacity of 256 kilobits and operates on a supply voltage of 2.7 to 3.6 volts. This FRAM module offers high-speed read/write operations with a maximum frequency of 1 MHz. The MB85RC256VPNF-G-JNE1 features a low power consumption design, making it suitable for battery-operated devices and other power-sensitive applications. It has a standby current consumption of just 12 microamps, which helps to extend battery life in portable devices. In terms of durability, this FRAM module offers high read/write endurance with a specified endurance of 10^14 read/write cycles. It also has a data retention period of 10 years at temperatures ranging from -40 to 85 degrees Celsius. The MB85RC256VPNF-G-JNE1 is housed in a small, surface-mount package measuring just 8-pin SOP, making it easy to integrate into compact electronic devices. It is also compatible with a wide range of microcontrollers, offering a flexible and versatile memory solution for various applications.

Key Features

• 256-Kbit FRAM for non-volatile data storage
• High-speed SPI interface
• Fast write time of 150 µs
• Low active and standby current
• Operating voltage range of 2.7V to 3.6V
• 10^10 write cycles endurance
• Data retention of 10 years

Application

• Industrial automation
• Smart meters
• Internet of Things (IoT) devices
• Smart grid
• Automotive applications
• Medical devices
• Sensor networks
• Home appliances
• Security systems
• Consumer electronics