• LM358BIDR SOIC (D)-8
LM358BIDR SOIC (D)-8

LM358BIDR

Wide temperature range

Quantity Unit Price(USD) Ext. Price
5 $0.120 $0.60
50 $0.098 $4.90
150 $0.087 $13.05
500 $0.079 $39.50
2500 $0.072 $180.00
5000 $0.069 $345.00

Inventory:8,088

*The price is for reference only.
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  • Part Number : LM358BIDR

  • Package/Case : SOIC (D)-8

  • Brands : TI

  • Components Categories : AmplifiersInstrumentation, OP Amps, Buffer Amps

  • Datesheet : LM358BIDR DataSheet (PDF)

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Overview of LM358BIDR

The LM358BIDR is a dual operational amplifier IC known for its wide operating voltage range and versatile applications. This IC features two independent op-amps in a single package, offering flexibility in signal processing and amplification tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VCC+: Positive power supply
  • VCC-: Negative power supply
  • IN-: Non-inverting input
  • IN+: Inverting input
  • OUT: Output
  • VCC+: Positive power supply
  • VCC-: Negative power supply
  • IN-: Non-inverting input
  • IN+: Inverting input
  • OUT: Output


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the LM358BIDR IC for a visual representation.

Key Features

  • Dual Operational Amplifiers: The LM358BIDR includes two independent op-amps, providing flexibility in signal processing tasks.
  • Wide Operating Voltage Range: This IC can operate from a single +3.0V to +32V power supply, accommodating various voltage requirements.
  • Low Input Offset Voltage: The LM358BIDR offers low input offset voltage, ensuring accurate amplification of input signals.
  • High Gain Bandwidth Product: With a high gain bandwidth product, this IC is suitable for high-frequency applications.
  • Low Quiescent Current: The LM358BIDR features low quiescent current, making it energy-efficient for prolonged use.

Note: For detailed technical specifications, please refer to the LM358BIDR datasheet.

Application

  • Signal Amplification: Ideal for amplifying weak signals in various electronic circuits.
  • Comparator: Can be used as a comparator for comparing two voltage levels in control systems.
  • Filter Circuits: Suitable for building active filter circuits for signal processing applications.

Functionality

The LM358BIDR is a dual operational amplifier IC that provides amplification and signal processing capabilities for a wide range of electronic applications. It offers reliable performance and versatility in circuit design.

Usage Guide

  • Power Supply: Connect VCC+ (Pin 4 and Pin 8) to the positive power supply and VCC- (Pin 11 and Pin 13) to the negative supply.
  • Input Signals: Apply input signals to the non-inverting (IN+) and inverting (IN-) input pins for amplification.
  • Output: The output pin provides the amplified signal corresponding to the input.

Frequently Asked Questions

Q: Can the LM358BIDR handle high-frequency signals?
A: Yes, the LM358BIDR has a high gain bandwidth product, allowing it to process high-frequency signals effectively.

Q: What is the typical input offset voltage of the LM358BIDR?
A: The LM358BIDR typically has a low input offset voltage of around 2 mV.

Equivalent

For similar functionalities, consider these alternatives to the LM358BIDR:

  • LM324N: A quad operational amplifier IC offering multiple op-amps in a single package for enhanced functionality.
  • TL082CP: A dual JFET-input operational amplifier providing low noise and high input impedance for precision applications.

LM358BIDR

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Number of channels 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 3 Rail-to-rail In to V-
GBW (typ) (MHz) 1.2 Slew rate (typ) (V/µs) 0.5
Vos (offset voltage at 25°C) (max) (mV) 3 Iq per channel (typ) (mA) 0.3
Vn at 1 kHz (typ) (nV√Hz) 40 Rating Catalog
Operating temperature range (°C) -40 to 85 Offset drift (typ) (µV/°C) 3.5
Features Cost Optimized, EMI Hardened, Standard Amps Input bias current (max) (pA) 35000
CMRR (typ) (dB) 94 Iout (typ) (A) 0.03
Architecture Bipolar Input common mode headroom (to negative supply) (typ) (V) 0
Input common mode headroom (to positive supply) (typ) (V) -1.5 Output swing headroom (to negative supply) (typ) (V) 0.005
Output swing headroom (to positive supply) (typ) (V) -1.4

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