JS28F128P33T85

FLASH - NOR Memory IC 128Mbit Parallel 40 MHz 85 ns 56-TSOP

Key Features

High performance

85 ns initial access

52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode

25 ns asynchronous-page read mode

4-, 8-, 16-, and continuous-word burst mode

Buffered Enhanced Factory Programming (BEFP) at 5 s/ byte (Typ)

1.8 V buffered programming at 7 s/byte (Typ)

Architecture

Multi-Level Cell Technology: Highest Density at Lowest Cost

Asymmetrically-blocked architecture

Four 32-KByte parameter blocks: top or bottom configuration

128-KByte main blocks

Voltage and Power

VCC (core) voltage: 1.7 V2.0 V

VCCQ (I/O) voltage: 1.7 V3.6 V

Standby current: 20A (Typ) for 64-Mbit

4-Word synchronous read current: 13 mA (Typ) at 40 MHz

Quality and Reliability

Operating temperature: 40 C to +85 C

Minimum 100,000 erase cycles per block

ETOX VIII process technology

Security

One-Time Programmable Registers:

64 unique factory device identifier bits

2112 user-programmable OTP bits

Selectable OTP Space in Main Array:

Four pre-defined 128-KByte blocks (top or bottom configuration)

Up to Full Array OTP Lockout

Absolute write protection: VPP = VSS

Power-transition erase/program lockout

Individual zero-latency block locking

Individual block lock-down

Software

20 s (Typ) program suspend

20 s (Typ) erase suspend

Numonyx Flash Data Integrator optimized

Basic Command Set and Extended Command Set compatible

Common Flash Interface capable

Density and Packaging

56- Lead TSOP package (64, 128, 256, 512- Mbit)

64- Ball Numonyx Easy BGA package (64, 128, 256, 512- Mbit)

Numonyx QUAD+ SCSP (64, 128, 256, 512- Mbit)

16-bit wide data bus