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JANSR2N7424

Trans MOSFET P-CH 60V 35A 3-Pin(3+Tab) TO-254AA

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Overview of JANSR2N7424

RAD-Hard™ HEXFET® TECHNOLOGYInternational Rectifier’s RAD-Hard HEXFETTMtechnology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.

Key Features

  • Single Event Effect (SEE) Hardened
  • Low RDS(on)
  • Low Total Gate Charge
  • Proton Tolerant
  • Simple Drive Requirements
  • Ease of Paralleling
  • Hermetically Sealed
  • Ceramic Package
  • Light Weight

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Configuration Discrete ID max -35.0 A
VF max -3.0 V Package TO-254AA
Polarity P Die Size 6
VBRDSS min -60.0 V QPL Part Number 2N7424
TID max 100.0 Krad(Si) ESD Class Class 3A
RDS (on) max 50.0 mΩ Generation R4
Optional TID Rating 100 300 Qualification DLA
Language SPICE Product Category Rad hard MOSFETs
Download Model https://www.infineon.com/cms/dgdl/Infineon-Spice_File_IRHM9064-SimulationModels-v01_01-EN.spi?fileId=8ac78c8c84f2c0670184f4eff1801081

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Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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