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IXZ2210N50L2

N channel enhancement mode linear RF power FET

Quantity Unit Price(USD) Ext. Price
1 $94.289 $94.29
210 $37.623 $7,900.83
510 $36.365 $18,546.15
990 $35.744 $35,386.56

Inventory:7,807

*The price is for reference only.
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Overview of IXZ2210N50L2

RF Mosfet 100 V 70MHz 17dB 270W

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer IXYS Product Category RF MOSFET Transistors
RoHS Details Transistor Polarity Dual N-Channel
Technology Si Id - Continuous Drain Current 10 A
Vds - Drain-Source Breakdown Voltage 500 V Rds On - Drain-Source Resistance 1 Ohms
Operating Frequency 2 MHz to 110 MHz Output Power 270 W
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Mounting Style SMD/SMT Package / Case SMD-8
Brand IXYS Integrated Circuits Forward Transconductance - Min 3.1 S
Number of Channels 2 Channel Pd - Power Dissipation 270 W
Product Type RF MOSFET Transistors Series IXZ221
Factory Pack Quantity 20 Subcategory MOSFETs
Type RF Power MOSFET Vgs - Gate-Source Voltage 20 V
Vgs th - Gate-Source Threshold Voltage 4 V

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