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IXTQ69N30P

Trans MOSFET N-CH 300V 69A 3-Pin(3+Tab) TO-3P

Quantity Unit Price(USD) Ext. Price
1 $5.734 $5.73
10 $4.987 $49.87
30 $4.531 $135.93
90 $4.150 $373.50

Inventory:4,815

*The price is for reference only.
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Overview of IXTQ69N30P

The IXTQ69N30P is a Power MOSFET designed for high-efficiency and high-frequency power applications. It features a low on-state resistance and low gate charge, making it suitable for power switching and motor control.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • S: Source
  • D: Drain
  • G: Gate
  • VCC: Positive power supply
  • NC: No connection
  • VSS: Ground
  • NC: No connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IXTQ69N30P for a visual representation.

Key Features

  • Low On-State Resistance: Provides efficient power dissipation and reduced heat generation during operation.
  • Low Gate Charge: Enables fast switching and improved overall system performance.
  • High Frequency Operation: Suitable for applications requiring high-frequency power switching.
  • Enhanced Efficiency: Offers high efficiency in power conversion and motor control applications.
  • Robust Construction: Built to withstand high voltage and current conditions for reliable performance.

Note: For detailed technical specifications, please refer to the IXTQ69N30P datasheet.

Application

  • Power Inverters: Ideal for use in power inverter circuits for converting DC power to AC power.
  • Motor Control: Suitable for controlling motors and actuators in various industrial and automotive applications.
  • Switched-Mode Power Supplies: Used in high-frequency power supply circuits for efficient power conversion.

Functionality

The IXTQ69N30P Power MOSFET is designed to efficiently switch high-frequency power in applications such as power inverters, motor control, and power supplies. It offers low on-state resistance and low gate charge for enhanced performance.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the driving circuit for controlling the switching operation.
  • Power Supply: Connect VCC and VSS to the appropriate power supply voltages (typically positive and ground).
  • Load Connection: Connect the load or motor to the drain (D) and source (S) pins for power switching or control.

Frequently Asked Questions

Q: What is the maximum operating frequency of the IXTQ69N30P?
A: The IXTQ69N30P is suitable for high-frequency operation and can handle frequencies commonly used in power switching applications.

Q: Can the IXTQ69N30P be used in automotive power systems?
A: Yes, the IXTQ69N30P is suitable for automotive applications such as motor control and power conversion due to its high efficiency and robust construction.

Equivalent

For similar power MOSFET options, consider these alternatives to the IXTQ69N30P:

  • IXTK90N25L2: This Power MOSFET offers similar high-frequency switching capabilities and low on-state resistance for power applications.
  • IRF540N: A power MOSFET from Infineon Technologies with comparable performance characteristics suitable for power switching and motor control.
  • STP55NF06L: This Power MOSFET from STMicroelectronics provides similar features and is suitable for high-efficiency power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-3P-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 300 V
Id - Continuous Drain Current 69 A Rds On - Drain-Source Resistance 49 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 180 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 500 W
Channel Mode Enhancement Series IXTQ69N30
Brand IXYS Configuration Single
Fall Time 27 ns Height 20.3 mm
Length 15.8 mm Product Type MOSFET
Rise Time 25 ns Factory Pack Quantity 30
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 75 ns Typical Turn-On Delay Time 25 ns
Width 4.9 mm Unit Weight 0.194007 oz

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