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IXTP15N50L2

Trans MOSFET N-CH 500V 15A 3-Pin(3+Tab) TO-220

Inventory:7,993

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Overview of IXTP15N50L2

Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA).When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C.

Key Features

  • Designed for linear operation
  • Guaranteed FBSOA at 75°C
  • Low on-resistances R
  • DS(on)
  • Avalanche rated
  • International standard packages
  • UL 94 V-0 Flammability qualified
  • (molding epoxies)

Application

  • E-fuses and hot-swap circuits
  • Battery management
  • Current regulators
  • Linear amplifiers
  • Fan controllers
  • Programmable loads
  • Soft-start control

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED Avalanche Energy Rating (Eas) 750 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V Drain Current-Max (ID) 15 A
Drain-source On Resistance-Max 0.48 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 68 pF JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 300 W Pulsed Drain Current-Max (IDM) 35 A
Surface Mount NO Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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