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IXTP120P065T

Trans MOSFET P-CH 65V 120A 3-Pin(3+Tab) TO-220AB

Inventory:5,255

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Please submit RFQ for IXTP120P065T or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of IXTP120P065T

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit.

Key Features

  • Fast intrinsic diode
  • Low Q
  • g
  • and RDS
  • on
  • Avalanche rated
  • Extended FBSOA
  • International standard packages
  • Advantages:
  • Low gate charge resulting in simple drive requirement
  • High power density
  • Fast switching

Application

  • High-side switching
  • Load switches
  • Low voltage applications
  • High-efficiency switching power supplies
  • Inverters and battery chargers

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED Avalanche Energy Rating (Eas) 1000 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 65 V Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.01 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 505 pF JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T4 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 298 W Pulsed Drain Current-Max (IDM) 360 A
Surface Mount NO Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

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Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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