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IXTK210P10T

Trench power MOSFETs for efficient performance

Inventory:3,785

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  • 365 Days Quality Guarantee
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Quick Inquiry

Please submit RFQ for IXTK210P10T or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of IXTK210P10T

Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit.

Key Features

  • Fast intrinsic diode
  • Low Q
  • g
  • and RDS
  • on
  • Avalanche rated
  • Extended FBSOA
  • International standard packages
  • Advantages:
  • Low gate charge resulting in simple drive requirement
  • High power density
  • Fast switching

Application

  • High-side switching
  • Load switches
  • Low voltage applications
  • High-efficiency switching power supplies
  • Inverters and battery chargers

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Drain-Source Voltage (V) -100 Maximum On-Resistance @ 25 ℃ (Ohm) 0.0075
Continuous Drain Current @ 25 ℃ (A) -210 Gate Charge (nC) 740
Input Capacitance, CISS (pF) 69500 Thermal resistance [junction-case] (K/W) 0.12
Configuration Single Package Type TO-264
Power Dissipation (W) 1040 Maximum Reverse Recovery (ns) 200
Sample Request No Check Stock Yes

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Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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