IXTH76P10T
MOSFET -76 Amps -100V 0.024 Rds
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $5.076 | $5.08 |
200 | $1.965 | $393.00 |
500 | $1.896 | $948.00 |
1000 | $1.862 | $1,862.00 |
Inventory:7,043
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Part Number : IXTH76P10T
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Package/Case : TO-247-3
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Brands : IXYS
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Components Categories : Single FETs, MOSFETs
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Datesheet : IXTH76P10T DataSheet (PDF)
Overview of IXTH76P10T
Trench P-Channel MOSFETs are well suited for ‘high side’ switching applications where a simple drive circuit referenced to ground can be employed, avoiding additional ‘high side’ driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, it allows for the design of a complementary power output stage with a corresponding N-Channel MOSFET, for a power half bridge stage paired with a simple drive circuit.
Key Features
- Fast intrinsic diode
- Low Q
- g
- and RDS
- on
- Avalanche rated
- Extended FBSOA
- International standard packages
- Advantages:
- Low gate charge resulting in simple drive requirement
- High power density
- Fast switching
Application
- High-side switching
- Load switches
- Low voltage applications
- High-efficiency switching power supplies
- Inverters and battery chargers
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | Yes | Part Life Cycle Code | Active |
Ihs Manufacturer | LITTELFUSE INC | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Samacsys Manufacturer | LITTELFUSE |
Additional Feature | AVALANCHE RATED | Avalanche Energy Rating (Eas) | 1000 mJ |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 100 V | Drain Current-Max (Abs) (ID) | 76 A |
Drain Current-Max (ID) | 76 A | Drain-source On Resistance-Max | 0.025 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-247 |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | P-CHANNEL |
Power Dissipation-Max (Abs) | 298 W | Pulsed Drain Current-Max (IDM) | 230 A |
Surface Mount | NO | Terminal Finish | MATTE TIN |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 10 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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