• IXFX180N25T PLUS247?-3
IXFX180N25T PLUS247?-3

IXFX180N25T

MOSFET 180A 250V

Inventory:6,622

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

  • Part Number : IXFX180N25T

  • Package/Case : PLUS247?-3

  • Brands : IXYS

  • Components Categories : FETs, MOSFETsSingle FETs, MOSFETs

  • Datesheet : IXFX180N25T DataSheet (PDF)

Quick Inquiry

Please submit RFQ for IXFX180N25T or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of IXFX180N25T

Trench Gate Power MOSFETs are ideally suited for low voltage/ high current applications, requiring an exceedingly low RDS(on), thus guaranteeing very low power Dissipation. This, combined with wide ranging operating junction temperature from -40 °C to 175 °C make them suitable candidates for automobile applications and other similar demanding applications in harsh environments.

IXFX180N25T

Key Features

  • International Standard Packages
  • Low R
  • DS(ON)
  • Avalanche rated
  • High Current Handling Capability
  • Fast Intrinsic Rectifier
  • Advantages:
  • Easy to Mount
  • Space Savings
  • High power density

Application

  • Switch-Mode and Resonant-Mode Power Supplies
  • DC-DC Converters
  • Battery Chargers
  • Uninterrupted Power Supplies
  • AC motor drives
  • DC Choppers

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC Reach Compliance Code compliant
ECCN Code EAR99 Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED Avalanche Energy Rating (Eas) 5000 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V Drain Current-Max (ID) 180 A
Drain-source On Resistance-Max 0.0129 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 47 pF JESD-30 Code R-PSIP-T3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style IN-LINE
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 1390 W
Pulsed Drain Current-Max (IDM) 500 A Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

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