IXFR66N50Q2
MOSFET 50 Amps 500V
Inventory:9,463
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Part Number : IXFR66N50Q2
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Package/Case : TO-247-3
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Brands : IXYS
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Components Categories : Single FETs, MOSFETs
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Datesheet : IXFR66N50Q2 DataSheet (PDF)
Overview of IXFR66N50Q2
N-Channel 500 V 50A (Tc) 500W (Tc) Through Hole ISOPLUS247™
Key Features
- Silicon chip on Direct-Copper-Bond substrate
- - High power dissipation
- - Isolated mounting surface
- - 2500V electrical isolation
- Low drain to tab capacitance(<30pF)
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Rated for Unclamped Inductive Load Switching (UIS)
- Fast intrinsic Rectifier
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Series | HiPerFET™ | Package | Tube |
| Product Status | Obsolete | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 33A, 10V | Vgs(th) (Max) @ Id | 5.5V @ 8mA |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V | Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 9125 pF @ 25 V | Power Dissipation (Max) | 500W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
| Supplier Device Package | ISOPLUS247™ | Package / Case | TO-247-3 |
| Base Product Number | IXFR66 |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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