IXFH74N20P
74A I(D) Power Field-Effect Transistor, 200V, 0.034ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN
Inventory:6,654
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Part Number : IXFH74N20P
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Package/Case : TO247-3
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Brands : IXYS
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Components Categories : Single FETs, MOSFETs
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Datesheet : IXFH74N20P DataSheet (PDF)
Overview of IXFH74N20P
The IXFH74N20P is a power MOSFET transistor designed for high power applications in industries such as automotive, industrial, and telecommunications. It has a drain-source voltage of 200V and a continuous drain current of 74A, making it suitable for high power switching circuits.This transistor features a low on-resistance of 90mΩ, which allows for efficient power conversion and reduced power losses. It also has a gate charge of 136nC, enabling fast and efficient switching speeds.The IXFH74N20P is housed in a TO-247 package, which provides high thermal conductivity for improved heat dissipation. This helps to maintain the transistor's operating temperature within safe limits, ensuring reliable performance in high power applications.The IXFH74N20P is designed to withstand high operating temperatures and voltage stresses, making it ideal for harsh industrial environments. It also features a robust construction that enhances its durability and reliability under high power conditions.
Key Features
Application
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Drain-Source Voltage (V) | 200 | Maximum On-Resistance @ 25 ℃ (Ohm) | 0.034 |
Continuous Drain Current @ 25 ℃ (A) | 74 | Gate Charge (nC) | 107 |
Input Capacitance, CISS (pF) | 3300 | Thermal resistance [junction-case] (K/W) | 0.31 |
Configuration | Single | Package Type | TO-247 |
Power Dissipation (W) | 480 | Maximum Reverse Recovery (ns) | 200 |
Sample Request | No | Check Stock | Yes |
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