• IRFR220NTRPBF D-Pak
IRFR220NTRPBF D-Pak

IRFR220NTRPBF

MOSFET 200V 1 N-CH HEXFET 600mOhms 15nC

Quantity Unit Price(USD) Ext. Price
5 $0.325 $1.62
50 $0.263 $13.15
150 $0.237 $35.55
500 $0.176 $88.00
2000 $0.161 $322.00
4000 $0.154 $616.00

Inventory:6,557

*The price is for reference only.
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Overview of IRFR220NTRPBF

The IRFR220NTRPBF is an N-channel power MOSFET designed for high-current applications. It features a low on-resistance and high switching speed, making it ideal for power management and conversion circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • VSS: Substrate

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRFR220NTRPBF MOSFET for a visual representation.

Key Features

  • N-Channel Power MOSFET: The IRFR220NTRPBF is an N-channel MOSFET suitable for high-current applications.
  • Low On-Resistance: This MOSFET offers low on-resistance for efficient power management.
  • High Switching Speed: With high switching speeds, the IRFR220NTRPBF is suitable for switching applications.
  • High Current Capability: Capable of handling high currents, making it suitable for power conversion circuits.

Note: For detailed technical specifications, please refer to the IRFR220NTRPBF datasheet.

Application

  • Power Management: Ideal for power management applications in various electronic devices.
  • Switching Circuits: Suitable for use in switching circuits for on/off control of high-power components.
  • Power Conversion: Used in power conversion circuits for efficient energy transfer.

Functionality

The IRFR220NTRPBF MOSFET is designed to control high currents and provide efficient power management solutions in electronic circuits. It offers low on-resistance and high switching speeds for reliable performance.

Usage Guide

  • Gate Connection: Connect the Gate pin (G) to the driving circuit for controlling the MOSFET.
  • Drain Connection: Connect the Drain pin (D) to the load or electronic component to be controlled.
  • Source Connection: Connect the Source pin (S) to the ground or return path of the circuit.

Frequently Asked Questions

Q: Is the IRFR220NTRPBF suitable for high-frequency switching applications?
A: Yes, the IRFR220NTRPBF offers high switching speeds, making it suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the IRFR220NTRPBF:

  • IRF3205: A widely used N-channel MOSFET with similar characteristics to the IRFR220NTRPBF.
  • FQP30N06L: This MOSFET offers comparable performance and is suitable for high-current applications.

IRFR220NTRPBF

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IRFR220NTRPBF Rohs Code Yes
Part Life Cycle Code Active Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2 Reach Compliance Code not_compliant
ECCN Code EAR99 Factory Lead Time 53 Weeks, 1 Day
Samacsys Manufacturer Infineon Avalanche Energy Rating (Eas) 46 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V Drain Current-Max (Abs) (ID) 5 A
Drain Current-Max (ID) 5 A Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 43 W Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier Terminal Form GULL WING
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

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