IRFB7534PBF
IRFB7534PBF N-Channel MOSFET Transistor, 195 A, 60 V StrongIRFET, 3-Pin TO-220AB Infineon
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $1.406 | $1.41 |
10 | $1.227 | $12.27 |
50 | $0.881 | $44.05 |
100 | $0.771 | $77.10 |
500 | $0.721 | $360.50 |
1000 | $0.697 | $697.00 |
Inventory:7,840
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Part Number : IRFB7534PBF
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Package/Case : TO-220AB
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Brands : INFINEON
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : IRFB7534PBF DataSheet (PDF)
The IRFB7534PBF is a power MOSFET transistor designed for high-current switching applications. It features a low on-state resistance and high-speed switching capabilities, making it ideal for use in power supply, motor control, and lighting applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IRFB7534PBF MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the IRFB7534PBF datasheet. Functionality The IRFB7534PBF MOSFET is a high-current switch that efficiently controls power flow in various electronic circuits. Its low on-state resistance and fast switching speed make it a reliable component in power management systems. Usage Guide Q: Is the IRFB7534PBF suitable for automotive applications? For similar functionalities, consider these alternatives to the IRFB7534PBF:Overview of IRFB7534PBF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the IRFB7534PBF can be used in automotive applications where high-current switching is required.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | IRFB7534PBF | Rohs Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | INFINEON TECHNOLOGIES AG |
Package Description | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code | compliant |
ECCN Code | EAR99 | Factory Lead Time | 52 Weeks |
Samacsys Manufacturer | Infineon | Avalanche Energy Rating (Eas) | 775 mJ |
Case Connection | ISOLATED | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 60 V | Drain Current-Max (Abs) (ID) | 195 A |
Drain Current-Max (ID) | 195 A | Drain-source On Resistance-Max | 0.0024 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 | Number of Elements | 1 |
Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 175 °C | Operating Temperature-Min | -55 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 294 W |
Pulsed Drain Current-Max (IDM) | 944 A | Surface Mount | NO |
Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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