IRF3205PBF
Infineon Technologies presents the IRF3205PBF
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.486 | $0.49 |
10 | $0.418 | $4.18 |
50 | $0.318 | $15.90 |
100 | $0.280 | $28.00 |
500 | $0.267 | $133.50 |
900 | $0.259 | $233.10 |
Inventory:5,455
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Part Number : IRF3205PBF
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Package/Case : TO-220-3
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Brands : INFINEON
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Components Categories : Single FETs, MOSFETs
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Datesheet : IRF3205PBF DataSheet (PDF)
The IRF3205PBF is a power MOSFET transistor designed for high-power switching applications in various electronic circuits. It features a low on-state resistance and high current-handling capacity, making it suitable for power management and conversion systems. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IRF3205PBF MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the IRF3205PBF datasheet. Functionality The IRF3205PBF MOSFET transistor is designed to provide high-current switching capabilities with low on-state resistance, enabling efficient power control and management in diverse electronic systems. Usage Guide Q: Is the IRF3205PBF suitable for high-frequency switching applications? For similar functionalities, consider these alternatives to the IRF3205PBF:Overview of IRF3205PBF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the IRF3205PBF offers fast switching speeds, making it suitable for high-frequency switching applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | Through Hole |
Package / Case | TO-220-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 55 V |
Id - Continuous Drain Current | 110 A | Rds On - Drain-Source Resistance | 8 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 97.3 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 150 W |
Channel Mode | Enhancement | Brand | Infineon Technologies |
Configuration | Single | Height | 15.65 mm |
Length | 10 mm | Product Type | MOSFET |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Width | 4.4 mm |
Unit Weight | 0.068784 oz |
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