• IRF3205PBF TO-220-3
IRF3205PBF TO-220-3

IRF3205PBF

Infineon Technologies presents the IRF3205PBF

Quantity Unit Price(USD) Ext. Price
1 $0.486 $0.49
10 $0.418 $4.18
50 $0.318 $15.90
100 $0.280 $28.00
500 $0.267 $133.50
900 $0.259 $233.10

Inventory:5,455

*The price is for reference only.
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Overview of IRF3205PBF

The IRF3205PBF is a power MOSFET transistor designed for high-power switching applications in various electronic circuits. It features a low on-state resistance and high current-handling capacity, making it suitable for power management and conversion systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE: Gate terminal for controlling the MOSFET switching
  • DRAIN: Main current-carrying terminal
  • SOURCE: Source terminal connected to ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRF3205PBF MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The IRF3205PBF offers a low RDS(on) value, resulting in minimal power dissipation and voltage drops during operation.
  • High Current Capacity: With a high drain current rating, this MOSFET can handle substantial power loads efficiently.
  • Fast Switching Speed: The IRF3205PBF provides quick switching times, ideal for high-frequency applications.
  • Enhanced Thermal Management: Designed for improved thermal dissipation to prevent overheating under high load conditions.

Note: For detailed technical specifications, please refer to the IRF3205PBF datasheet.

Application

  • Power Supply Units: Suitable for use in power supplies, inverters, and converters for efficient power management.
  • Motor Control: Ideal for controlling motors and actuators in automotive, industrial, and robotics applications.
  • Switching Circuits: Used in various electronic circuits for power switching and current regulation.

Functionality

The IRF3205PBF MOSFET transistor is designed to provide high-current switching capabilities with low on-state resistance, enabling efficient power control and management in diverse electronic systems.

Usage Guide

  • GATE Connection: Apply appropriate voltage levels to the gate terminal for switching the MOSFET.
  • DRAIN/SOURCE Connections: Connect the load or power source between the drain and source terminals for current flow control.

Frequently Asked Questions

Q: Is the IRF3205PBF suitable for high-frequency switching applications?
A: Yes, the IRF3205PBF offers fast switching speeds, making it suitable for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the IRF3205PBF:

  • IRF540N: A power MOSFET with comparable specifications suitable for high-power applications.
  • IRF740: This MOSFET transistor offers similar characteristics to the IRF3205PBF with some variations in parameters.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 55 V
Id - Continuous Drain Current 110 A Rds On - Drain-Source Resistance 8 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 97.3 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 150 W
Channel Mode Enhancement Brand Infineon Technologies
Configuration Single Height 15.65 mm
Length 10 mm Product Type MOSFET
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Width 4.4 mm
Unit Weight 0.068784 oz

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