• IPB019N08N3G TO-263-7,D²Pak(6Leads+Tab)
IPB019N08N3G TO-263-7,D²Pak(6Leads+Tab)

IPB019N08N3G

Trans MOSFET N-CH 80V 180A 7-Pin(6+Tab) D2PAK T/R

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  • Part Number : IPB019N08N3G

  • Package/Case : TO-263-7,D²Pak(6Leads+Tab)

  • Brands : Infineon Technologies

  • Components Categories : Single FETs, MOSFETs

  • Datesheet : IPB019N08N3G DataSheet (PDF)

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Overview of IPB019N08N3G

The IPB019N08N3G is a power MOSFET designed for high-performance applications requiring efficient power switching capabilities. This MOSFET features a low on-state resistance and high current-handling capacity, making it suitable for power management in various electronic systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IPB019N08N3G MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The IPB019N08N3G offers a low RDS(on) for minimal power dissipation and improved efficiency.
  • High Current-Handling Capacity: This MOSFET can handle high currents, making it suitable for power switching applications.
  • Fast Switching Speed: With its low gate charge, the IPB019N08N3G provides fast switching times for improved performance.
  • Enhanced Thermal Performance: The MOSFET is designed for enhanced thermal dissipation, ensuring reliability under high loads.
  • Overcurrent Protection: Includes overcurrent protection features to prevent damage to the MOSFET and the connected circuit.

Note: For detailed technical specifications, please refer to the IPB019N08N3G datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems, such as DC-DC converters and motor control applications.
  • Switching Circuits: Suitable for high-speed switching circuits in power supplies, inverters, and LED drivers.
  • Voltage Regulation: Used in voltage regulation circuits to control and regulate power flow in electronic devices.

Functionality

The IPB019N08N3G power MOSFET is designed to efficiently switch high currents with low on-state resistance, providing reliable power management capabilities in various electronic applications.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the gate driving circuit for proper switching operation.
  • Drain Connection: Connect the drain (D) pin to the load to control the power flow.
  • Source Connection: Connect the source (S) pin to the ground reference for circuit operation.

Frequently Asked Questions

Q: Is the IPB019N08N3G suitable for automotive applications?
A: Yes, the IPB019N08N3G is designed for automotive-grade performance, making it suitable for automotive power systems.

Equivalent

For similar functionalities, consider these alternatives to the IPB019N08N3G:

  • IPB016N10N3G: This power MOSFET offers similar performance characteristics with a slightly different voltage and current rating.
  • IPB020N06N3G: Another power MOSFET option with comparable specifications for high-power applications.

IPB019N08N3G

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series OptiMOS™ Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V Current - Continuous Drain (Id) @ 25°C 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 1.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 3.5V @ 270µA Gate Charge (Qg) (Max) @ Vgs 206 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 14200 pF @ 40 V
Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Supplier Device Package PG-TO263-7
Package / Case TO-263-7, D²Pak (6 Leads + Tab) Base Product Number IPB019

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