• IKW40N120T2 TO-247
IKW40N120T2 TO-247

IKW40N120T2

Trans IGBT Chip N-CH 1200V 75A 480W 3-Pin(3+Tab) TO-247 Tube

Quantity Unit Price(USD) Ext. Price
1 $2.970 $2.97
10 $2.821 $28.21
30 $2.731 $81.93
90 $2.641 $237.69
660 $2.599 $1,715.34
990 $2.581 $2,555.19

Inventory:6,648

*The price is for reference only.
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Overview of IKW40N120T2

The IKW40N120T2 is a high-power IGBT (Insulated Gate Bipolar Transistor) designed for various industrial and automotive applications. This IGBT module features a high current rating and low saturation voltage, making it suitable for use in power switching circuits requiring high efficiency and reliability.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector: Connect to the collector terminal of the IGBT.
  • Emitter: Connect to the emitter terminal of the IGBT.
  • Gate: Connect to the gate terminal of the IGBT.
  • Voltage Sense: Terminal for voltage sensing.
  • Temperature Sense: Terminal for temperature sensing.
  • GND: Power ground.
  • NC: No connection.

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IKW40N120T2 IGBT module for a visual representation.

Key Features

  • High-Power IGBT: The IKW40N120T2 is capable of handling high currents and voltages, suitable for demanding industrial applications.
  • Low Saturation Voltage: Features a low saturation voltage, reducing power losses and improving efficiency.
  • High Reliability: Designed for reliable operation in harsh environments, ensuring long-term performance.
  • Temperature and Voltage Sensing: Includes terminals for temperature and voltage sensing, enabling precise monitoring and control.
  • Wide Operating Temperature Range: Operates efficiently over a wide temperature range, suitable for various operating conditions.

Note: For detailed technical specifications, please refer to the IKW40N120T2 datasheet.

Application

  • Industrial Power Systems: Ideal for use in industrial power systems, including motor drives, inverters, and welding equipment.
  • Automotive Electronics: Suitable for automotive applications such as electric vehicle powertrains and battery management systems.
  • Renewable Energy: Used in renewable energy systems such as solar inverters and wind turbines for efficient power conversion.

Functionality

The IKW40N120T2 is a high-power IGBT module designed for reliable power switching applications. It offers low saturation voltage and high current handling capabilities, ensuring efficient and stable operation in various industrial and automotive systems.

Usage Guide

  • Power Supply: Connect the collector, emitter, and gate terminals according to the circuit requirements.
  • Temperature and Voltage Sensing: Utilize the temperature and voltage sensing terminals for precise monitoring and control.
  • Ground Connection: Ensure proper grounding by connecting the GND terminal to the power ground.

Frequently Asked Questions

Q: What is the maximum current rating of the IKW40N120T2?
A: The IKW40N120T2 can handle maximum currents up to a specified value. Refer to the datasheet for precise details.

Q: Is the IKW40N120T2 suitable for automotive applications?
A: Yes, the IKW40N120T2 is designed for use in automotive electronics, offering high reliability and performance in electric vehicle powertrains and other automotive systems.

Equivalent

For similar functionalities, consider these alternatives to the IKW40N120T2:

  • IXGH40N120B3: This is another high-power IGBT module with comparable specifications to the IKW40N120T2, suitable for industrial and automotive applications.
  • FGL40N120AND: A high-current IGBT module designed for efficient power switching in various electronic systems, offering similar performance characteristics.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Infineon Product Category IGBT Transistors
RoHS Details Technology Si
Package / Case TO-247-3 Mounting Style Through Hole
Configuration Single Collector- Emitter Voltage VCEO Max 1.2 kV
Collector-Emitter Saturation Voltage 1.75 V Maximum Gate Emitter Voltage - 20 V, + 20 V
Continuous Collector Current at 25 C 75 A Pd - Power Dissipation 480 W
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 175 C
Series Trenchstop IGBT2 Brand Infineon Technologies
Gate-Emitter Leakage Current 200 nA Height 20.9 mm
Length 15.9 mm Product Type IGBT Transistors
Factory Pack Quantity 240 Subcategory IGBTs
Tradename TRENCHSTOP Width 5.03 mm
Part # Aliases IKW4N12T2XK SP000244962 IKW40N120T2FKSA1 Unit Weight 1.340411 oz

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