HN1B04FU-GR,LF
Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
Inventory:8,279
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Part Number : HN1B04FU-GR,LF
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Package/Case : SOT-363-6
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Brands : TOSHIBA
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Components Categories : Bipolar Transistors - BJT
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Datesheet : HN1B04FU-GR,LF DataSheet (PDF)
Overview of HN1B04FU-GR,LF
Bipolar (BJT) Transistor Array 1 NPN, 1 PNP 50V 150mA 150MHz 200mW Surface Mount US6
Application
Driver Stage Amplifier Applications
Switching application
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Manufacturer | Toshiba | Product Category | Bipolar Transistors - BJT |
| RoHS | Details | Mounting Style | SMD/SMT |
| Package / Case | SOT-363-6 | Transistor Polarity | NPN, PNP |
| Configuration | Dual | Collector- Emitter Voltage VCEO Max | 50 V |
| Collector- Base Voltage VCBO | 60 V, 50 V | Emitter- Base Voltage VEBO | 5 V |
| Collector-Emitter Saturation Voltage | 100 mV | Maximum DC Collector Current | 150 mA |
| Pd - Power Dissipation | 200 mW | Gain Bandwidth Product fT | 150 MHz, 120 MHz |
| Minimum Operating Temperature | - | Maximum Operating Temperature | + 125 C |
| Qualification | AEC-Q101 | Series | HN1B04 |
| Brand | Toshiba | DC Collector/Base Gain hfe Min | 120 |
| DC Current Gain hFE Max | 400 | Product Type | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 3000 | Subcategory | Transistors |
| Technology | Si | Unit Weight | 0.000265 oz |
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Warranty, Returns, and Additional Information
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