GT40T301
IGBT Transistors
Inventory:6,089
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Part Number : GT40T301
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Package/Case : TO-3PL
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Brands : TOSHIBA
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Components Categories : TransistorsIGBT Transistors
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Datesheet : GT40T301 DataSheet (PDF)
Overview of GT40T301
Parallel Resonance Inverter Switching Applications• FRD included between emitter and collector• Enhancement-mode• High speed IGBT : tf = 0.25 µs (typ.) (IC = 40 A) FRD : trr = 0.7 µs (typ.) (di/dt = −20 A/µs)• Low saturation voltage: VCE (sat) = 3.7 V (typ.) (IC = 40 A)
Key Features
HIGH SPEEDApplication
POWER CONTROLSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | GT40T301 | Rohs Code | No |
Part Life Cycle Code | Obsolete | Ihs Manufacturer | TOSHIBA CORP |
Package Description | FLANGE MOUNT, R-PSFM-T3 | Pin Count | 3 |
Reach Compliance Code | ECCN Code | EAR99 | |
Samacsys Manufacturer | Toshiba | Additional Feature | HIGH SPEED |
Case Connection | COLLECTOR | Collector Current-Max (IC) | 40 A |
Collector-Emitter Voltage-Max | 1500 V | Configuration | SINGLE WITH BUILT-IN DIODE |
Fall Time-Max (tf) | 400 ns | Gate-Emitter Voltage-Max | 25 V |
JESD-30 Code | R-PSFM-T3 | JESD-609 Code | e0 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 200 W |
Qualification Status | Not Qualified | Surface Mount | NO |
Terminal Finish | Tin/Lead (Sn/Pb) | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Transistor Application | POWER CONTROL |
Transistor Element Material | SILICON | Turn-off Time-Nom (toff) | 600 ns |
Turn-on Time-Nom (ton) | 450 ns |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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