GT40RR21
IGBT Transistors
Inventory:9,571
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Part Number : GT40RR21
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Package/Case : TO-3PN-3
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Brands : TOSHIBA
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Components Categories : IGBT Transistors
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Datesheet : GT40RR21 DataSheet (PDF)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | Toshiba | Product Category | IGBT Transistors |
Technology | Si | Package / Case | TO-3PN-3 |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.35 kV | Collector-Emitter Saturation Voltage | 1.6 V |
Maximum Gate Emitter Voltage | - 25 V, 25 V | Continuous Collector Current at 25 C | 40 A |
Pd - Power Dissipation | 230 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Series | GT40RR21 |
Brand | Toshiba | Continuous Collector Current Ic Max | 200 A |
Gate-Emitter Leakage Current | 100 nA | Product Type | IGBT Transistors |
Subcategory | IGBTs |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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