FQD6N40CTM
1Ω resistance at 10V
Inventory:9,540
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Part Number : FQD6N40CTM
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Package/Case : DPAK-3
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Brands : Onsemi
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Components Categories : Single FETs, MOSFETs
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Datesheet : FQD6N40CTM DataSheet (PDF)
Overview of FQD6N40CTM
FQD6N40CTM is a power MOSFET transistor produced by ON Semiconductor. It is designed for high-power switching applications in power supplies, motor control, and other industrial applications. The FQD6N40CTM features a drain-source voltage rating of 400 volts and a continuous drain current of 6 amperes, making it suitable for a wide range of high-power applications. It has a low on-resistance of 0.7 ohms, which helps minimize conduction losses and improve efficiency in power systems.This MOSFET transistor also has a fast switching speed and a low gate charge, allowing for efficient switching operations and reducing switching losses. It has a TO-252 package with a compact and low-profile design, making it easy to mount on circuit boards and heat sinks.
Key Features
Application
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Status | Active | Compliance | PbAHP |
Package Type | DPAK-3 / TO-252-3 | Case Outline | 369AS |
MSL Type | 1 | MSL Temp (°C) | 260 |
Container Type | REEL | Container Qty. | 2500 |
ON Target | Y | Channel Polarity | N-Channel |
Configuration | Single | V(BR)DSS Min (V) | 400 |
VGS Max (V) | ±30 | VGS(th) Max (V) | 4 |
ID Max (A) | 4.5 | PD Max (W) | 48 |
RDS(on) Max @ VGS = 10 V (mΩ) | 1000 | Qg Typ @ VGS = 10 V (nC) | 16 |
Ciss Typ (pF) | 480 | Pricing ($/Unit) | $0.4788Sample |
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