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FQA8N100C

Transistor type: N-MOSFET

Inventory:5,791

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  • Part Number : FQA8N100C

  • Package/Case : TO-3PN-3

  • Brands : Onsemi

  • Components Categories : Single FETs, MOSFETs

  • Datesheet : FQA8N100C DataSheet (PDF)

Quick Inquiry

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Overview of FQA8N100C

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

  • 8A, 1000V, RDS(on) = 1.45Ω(Max.) @VGS = 10 V, ID = 4A
  • Low gate charge ( Typ. 53nC)
  • Low Crss ( Typ. 16pF)
  • 100% avalanche tested

Application

  • Uninterruptible Power Supply
  • Other Industrial

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style Through Hole Package / Case TO-3PN-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 1 kV Id - Continuous Drain Current 8 A
Rds On - Drain-Source Resistance 1.45 Ohms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 3 V Qg - Gate Charge 70 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 225 W Channel Mode Enhancement
Tradename QFET Series FQA8N100C
Brand onsemi / Fairchild Configuration Single
Fall Time 80 ns Forward Transconductance - Min 8 S
Height 20.1 mm Length 16.2 mm
Product Type MOSFET Rise Time 95 ns
Factory Pack Quantity 450 Subcategory MOSFETs
Transistor Type 1 N-Channel Type MOSFET
Typical Turn-Off Delay Time 122 ns Typical Turn-On Delay Time 50 ns
Width 5 mm Unit Weight 0.162260 oz

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Warranty, Returns, and Additional Information

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