FDV302P
Trans MOSFET P-CH 25V 0.12A 3-Pin SOT-23 T/R
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
10 | $0.035 | $0.35 |
100 | $0.028 | $2.80 |
300 | $0.024 | $7.20 |
3000 | $0.022 | $66.00 |
6000 | $0.020 | $120.00 |
9000 | $0.019 | $171.00 |
Inventory:6,174
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Part Number : FDV302P
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Package/Case : SOT-23
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Brands : FAIRCHILD/ON
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : FDV302P DataSheet (PDF)
The FDV302P is a P-channel PowerTrench MOSFET featuring low on-state resistance and fast switching performance. It is designed for power management applications where efficient power handling is crucial. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the FDV302P MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the FDV302P datasheet. Functionality The FDV302P is a P-channel PowerTrench MOSFET designed for power management applications. It offers low on-state resistance and fast switching speeds, making it a reliable component for efficient power handling. Usage Guide Q: Is the FDV302P suitable for high-frequency applications? For similar functionalities, consider these alternatives to the FDV302P:Overview of FDV302P
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the FDV302P offers fast switching speeds, making it suitable for high-frequency applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 25 V |
Id - Continuous Drain Current | 120 mA | Rds On - Drain-Source Resistance | 13 Ohms |
Vgs - Gate-Source Voltage | - 8 V, + 8 V | Vgs th - Gate-Source Threshold Voltage | 1.5 V |
Qg - Gate Charge | 310 pC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 350 mW |
Channel Mode | Enhancement | Series | FDV302P |
Brand | onsemi / Fairchild | Configuration | Single |
Fall Time | 8 ns | Forward Transconductance - Min | 0.135 S |
Height | 1.2 mm | Length | 2.9 mm |
Product | MOSFET Small Signal | Product Type | MOSFET |
Rise Time | 8 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Type | MOSFET | Typical Turn-Off Delay Time | 9 ns |
Typical Turn-On Delay Time | 5 ns | Width | 1.3 mm |
Part # Aliases | FDV302P_NL | Unit Weight | 0.000282 oz |
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Warranty, Returns, and Additional Information
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