FCB070N65S3
MOSFET SuperFET3 650V 70mOhm
| Quantity | Unit Price(USD) | Ext. Price |
|---|---|---|
| 1 | $4.222 | $4.22 |
| 10 | $3.705 | $37.05 |
| 30 | $3.397 | $101.91 |
| 100 | $3.087 | $308.70 |
| 500 | $2.943 | $1,471.50 |
| 800 | $2.879 | $2,303.20 |
Inventory:5,279
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
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Part Number : FCB070N65S3
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Package/Case : TO263
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Brands : onsemi
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Components Categories : Single FETs, MOSFETs
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Datesheet : FCB070N65S3 DataSheet (PDF)
Overview of FCB070N65S3
SUPERFET III MOSFET is ON Semiconductor’s brand−new highvoltage super−junction (SJ) MOSFET family that is utilizing chargebalance technology for outstanding low on−resistance and lower gatecharge performance. This advanced technology is tailored to minimizeconduction loss, provide superior switching performance, andwithstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
Key Features
- 700 V @ TJ = 150 oC
- Ultra Low Gate Charge (Typ. Qg = 78 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
- Optimized Capacitance
- Typ. RDS(on) = 62 mΩ
- 100% Avalanche Tested
- RoHS Compliant
- Wave soldering guarantee
Application
- Telecommunication
- Cloud system
- Industrial
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Product Category | MOSFET | RoHS | Details |
| REACH | Details | Technology | Si |
| Mounting Style | SMD/SMT | Package / Case | D2PAK-3 (TO-263-3) |
| Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
| Vds - Drain-Source Breakdown Voltage | 650 V | Id - Continuous Drain Current | 44 A |
| Rds On - Drain-Source Resistance | 70 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V | Qg - Gate Charge | 78 nC |
| Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
| Pd - Power Dissipation | 312 W | Channel Mode | Enhancement |
| Tradename | SuperFET III | Series | FCB070N65S3 |
| Brand | onsemi / Fairchild | Configuration | Single |
| Fall Time | 16 ns | Forward Transconductance - Min | 29 S |
| Height | 4.83 mm | Length | 10.67 mm |
| Product Type | MOSFET | Rise Time | 52 ns |
| Factory Pack Quantity | 800 | Subcategory | MOSFETs |
| Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 89 ns |
| Typical Turn-On Delay Time | 26 ns | Width | 9.65 mm |
| Unit Weight | 0.139332 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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