EPC2012
GANFET TRANS 200V 3A BUMPED DIE
Inventory:4,113
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
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Part Number : EPC2012
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Package/Case : Die
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Brands : EPC
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Components Categories : FETs, MOSFETsSingle FETs, MOSFETs
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Datesheet : EPC2012 DataSheet (PDF)
Overview of EPC2012
Power Field-Effect Transistor, 3A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-4
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Rohs Code | Yes | Part Life Cycle Code | Obsolete |
Ihs Manufacturer | EFFICIENT POWER CONVERSION CORP | Package Description | UNCASED CHIP, R-XXUC-X4 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Additional Feature | ULTRA LOW RESISTANCE | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 200 V | Drain Current-Max (Abs) (ID) | 3 A |
Drain Current-Max (ID) | 3 A | Drain-source On Resistance-Max | 0.1 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 4.4 pF |
JESD-30 Code | R-XXUC-X4 | Number of Elements | 1 |
Number of Terminals | 4 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 125 °C | Operating Temperature-Min | -40 °C |
Package Body Material | UNSPECIFIED | Package Shape | RECTANGULAR |
Package Style | UNCASED CHIP | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL | Pulsed Drain Current-Max (IDM) | 15 A |
Terminal Form | UNSPECIFIED | Terminal Position | UNSPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | Transistor Application | SWITCHING |
Transistor Element Material | GALLIUM NITRIDE |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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