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EPC2012

GANFET TRANS 200V 3A BUMPED DIE

Inventory:4,113

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee
  • Part Number : EPC2012

  • Package/Case : Die

  • Brands : EPC

  • Components Categories : FETs, MOSFETsSingle FETs, MOSFETs

  • Datesheet : EPC2012 DataSheet (PDF)

Quick Inquiry

Please submit RFQ for EPC2012 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of EPC2012

Power Field-Effect Transistor, 3A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-4

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Obsolete
Ihs Manufacturer EFFICIENT POWER CONVERSION CORP Package Description UNCASED CHIP, R-XXUC-X4
Reach Compliance Code compliant ECCN Code EAR99
Additional Feature ULTRA LOW RESISTANCE Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V Drain Current-Max (Abs) (ID) 3 A
Drain Current-Max (ID) 3 A Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR Feedback Cap-Max (Crss) 4.4 pF
JESD-30 Code R-XXUC-X4 Number of Elements 1
Number of Terminals 4 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 125 °C Operating Temperature-Min -40 °C
Package Body Material UNSPECIFIED Package Shape RECTANGULAR
Package Style UNCASED CHIP Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Pulsed Drain Current-Max (IDM) 15 A
Terminal Form UNSPECIFIED Terminal Position UNSPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material GALLIUM NITRIDE

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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