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EN29LV800CB-70TIP

Flash, 512KX16, 70ns, PDSO48, 12 X 20 MM, ROHS COMPLIANT, TSOP1-48

Inventory:3,881

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Overview of EN29LV800CB-70TIP

GENERAL DESCRIPTIONThe EN29LV800C is an 8-Megabit, electrically erasable, read/write non-volatile flash memory, organized as 1,048,576 bytes or 524,288 words. Any byte can be programmed typically in 8µs. The EN29LV800C features 3.0V voltage read and write operation, with access time as fast as 70ns to eliminate the need for WAIT statements in high-performance microprocessor systems.FEATURES• Single power supply operation - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications. - Regulated voltage range: 3.0-3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors.• High performance - Access times as fast as 70 ns• Low power consumption (typical values at 5 MHz) - 7 mA typical active read current - 15 mA typical program/erase current - 1 mA typical standby current (standard access time to active mode)• Flexible Sector Architecture: - One 16-Kbyte, two 8-Kbyte, one 32-Kbyte, and fifteen 64-Kbyte sectors (byte mode) - One 8-Kword, two 4-Kword, one 16-Kword and fifteen 32-Kword sectors (word mode)• High performance program/erase speed - Byte/Word program time: 8µs typical - Sector erase time: 500ms typical• Sector protection: - Hardware locking of sectors to prevent program or erase operations within individual sectors - Additionally, temporary Sector Unprotect allows code changes in previously locked sectors.• JEDEC Standard Embedded Erase and Program Algorithms• JEDEC standard DATA# polling and toggle bits feature• Single Sector and Chip Erase• Sector Unprotect Mode• Erase Suspend / Resume modes: Read or program another Sector during Erase Suspend Mode• Low Vcc write inhibit <2.5V• Minimum 100K endurance cycle• Package Options - 48-pin TSOP (Type 1) - 48-ball 6mm x 8mm TFBGA• Industrial temperature Range

Key Features

  • Single power supply operation
  • - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications.
  • - Regulated voltage range: 3.0-3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors.
  • High performance
  • - Access times as fast as 70 ns
  • Low power consumption (typical values at 5 MHz)
  • - 9 mA typical active read current
  • - 20 mA typical program/erase current
  • - 1 μA typical standby current (standard access time to active mode)
  • Flexible Sector Architecture:
  • - One 16-Kbyte, two 8-Kbyte, one 32-Kbyte, and fifteen 64-Kbyte sectors (byte mode)
  • - One 8-Kword, two 4-Kword, one 16-Kword and fifteen 32-Kword sectors (word mode)
  • High performance program/erase speed
  • - Byte/Word program time: 8µs typical
  • - Sector erase time: 100ms typical
  • Sector protection:
  • - Hardware locking of sectors to prevent program or erase operations within individual sectors
  • - Additionally, temporary Sector Unprotect allows code changes in previously locked sectors.
  • JEDEC Standard Embedded Erase and Program Algorithms
  • JEDEC standard DATA# polling and toggle bits feature
  • Single Sector and Chip Erase
  • Sector Unprotect Mode
  • Erase Suspend / Resume modes: Read or program another Sector during Erase Suspend Mode
  • Low Vcc write inhibit <2.5V
  • Minimum 100K endurance cycle
  • Package Options
  • - 48-pin TSOP (Type 1)
  • - 48-ball 6mm x 8mm TFBGA
  • Industrial and Automotive temperature Range

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Transferred
Ihs Manufacturer EON SILICON SOLUTION INC Package Description TSOP1, TSSOP48,.8,20
Reach Compliance Code ECCN Code EAR99
HTS Code 8542.32.00.51 Samacsys Manufacturer Eon Silicon Solution Inc.
Access Time-Max 70 ns Additional Feature BOTTOM BOOT SECTOR
Alternate Memory Width 8 Boot Block BOTTOM
Command User Interface YES Data Polling YES
Endurance 100000 Write/Erase Cycles JESD-30 Code R-PDSO-G48
Length 18.4 mm Memory Density 8388608 bit
Memory IC Type FLASH Memory Width 16
Number of Functions 1 Number of Sectors/Size 1,2,1,15
Number of Terminals 48 Number of Words 524288 words
Number of Words Code 512000 Operating Mode ASYNCHRONOUS
Operating Temperature-Max 85 °C Operating Temperature-Min -40 °C
Organization 512KX16 Package Body Material PLASTIC/EPOXY
Package Code TSOP1 Package Equivalence Code TSSOP48,.8,20
Package Shape RECTANGULAR Package Style SMALL OUTLINE, THIN PROFILE
Parallel/Serial PARALLEL Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Supplies 3/3.3 V Programming Voltage 3 V
Qualification Status Not Qualified Ready/Busy YES
Seated Height-Max 1.2 mm Sector Size 16K,8K,32K,64K
Standby Current-Max 0.000005 A Supply Current-Max 0.02 mA
Supply Voltage-Max (Vsup) 3.6 V Supply Voltage-Min (Vsup) 2.7 V
Supply Voltage-Nom (Vsup) 3 V Surface Mount YES
Technology CMOS Temperature Grade INDUSTRIAL
Terminal Form GULL WING Terminal Pitch 0.5 mm
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Toggle Bit YES Type NOR TYPE
Width 12 mm

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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