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DN2540N3-G

Trans MOSFET N-CH Si 400V 0.12A 3-Pin TO-92 Bag

Inventory:7,007

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Overview of DN2540N3-G

DN2540 is a low threshold depletion mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Key Features

    • High input impedance
    • Low input capacitance
    • Fast switching speeds
    • Low on-resistance
    • Free from secondary breakdown
    • Low input and output leakage

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-92-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 400 V
Id - Continuous Drain Current 120 mA Rds On - Drain-Source Resistance 25 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3.5 V
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1 W Channel Mode Depletion
Brand Microchip Technology Configuration Single
Fall Time 20 ns Height 5.33 mm
Length 5.21 mm Product Type MOSFET
Rise Time 15 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type FET Width 4.19 mm
Unit Weight 0.016000 oz

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