CY7C131E-55NXI

The CY7C131E-55NXI is a high-speed CMOS static RAM (SRAM) integrated circuit with a capacity of 256K (32K x 8). It operates at a speed of 55ns, providing fast and reliable data storage and retrieval capabilities for various electronic systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

• VDD: Power Supply Voltage
• OE: Output Enable
• CE: Chip Enable
• WE: Write Enable
• A0-A14: Address Inputs
• DQ0-DQ7: Data Inputs/Outputs
• NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the CY7C131E-55NXI SRAM IC for a visual representation.

Key Features

• High-Speed Operation: With a 55ns access time, the CY7C131E-55NXI offers rapid data access for efficient system performance.
• 256K Capacity: This SRAM IC provides a storage capacity of 256K (32K x 8), suitable for data buffering and cache memory applications.
• Low Power Consumption: The CMOS technology used in the CY7C131E-55NXI ensures minimal power usage, ideal for energy-efficient designs.
• Wide Operating Voltage Range: Operates within a voltage range compatible with various digital systems, enhancing flexibility in system integration.
• Industrial Temperature Range: Suitable for industrial applications with an extended temperature operating range.

Note: For detailed technical specifications, please refer to the CY7C131E-55NXI datasheet.

Application

• Memory Buffer: Ideal for use as a memory buffer in data-intensive applications.
• Embedded Systems: Suitable for embedded systems requiring fast and reliable data storage.
• Data Logging: Used in data logging systems for temporary data storage before permanent storage or processing.

Functionality

The CY7C131E-55NXI SRAM IC provides high-speed, non-volatile data storage capabilities, making it an essential component in electronic systems requiring fast and reliable memory access.

Usage Guide

• Power Supply: Connect VDD (Pin 1) to the appropriate power supply voltage within the specified range.
• Control Signals: Utilize the OE, CE, and WE pins to manage output enable, chip enable, and write enable functions, respectively.
• Data Transfer: Use the address inputs (A0-A14) and data input/output pins (DQ0-DQ7) for data storage and retrieval operations.

Frequently Asked Questions

Q: What is the operating speed of the CY7C131E-55NXI SRAM IC?
A: The CY7C131E-55NXI operates at a speed of 55ns, providing fast data access for efficient system performance.

Q: Can the CY7C131E-55NXI be used in industrial applications?
A: Yes, the CY7C131E-55NXI is designed to operate within an industrial temperature range, making it suitable for industrial applications requiring reliable data storage.