CSD25501F3
MOSFET -20-V, P channel NexFET power MOSFET, single LGA 0.6 mm x 0.7 mm, 76 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
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Part Number : CSD25501F3
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Package/Case : 3-LGA (0.73x0.64)
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Brands : TI
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Components Categories : Single FETs, MOSFETs
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Datesheet : CSD25501F3 DataSheet (PDF)
Overview of CSD25501F3
This –20-V, 64-mΩ, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size. The integrated 10-kΩ clamp resistor (RC) allows the gate voltage (VGS) to be operated above the maximum internal gate oxide value of –6 V, depending on duty cycle. The gate leakage (IGSS) through the diode increases as VGS is increased above –6 V.
Key Features
- Low on-resistance
- Ultra-low Qg and Qgd
- Ultra-small footprint
- 0.7 mm × 0.6 mm
- Low profile
- 0.22-mm max height
- Integrated ESD protection diode
- Lead and halogen free
- RoHS compliant
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
| Source Content uid | CSD25501F3 | Pbfree Code | Yes |
| Rohs Code | Yes | Part Life Cycle Code | Active |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | Package Description | GRID ARRAY, R-PBGA-B3 |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| HTS Code | 8541.21.00.40 | Date Of Intro | 2017-10-07 |
| Samacsys Manufacturer | Texas Instruments | Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
| DS Breakdown Voltage-Min | 20 V | Drain Current-Max (Abs) (ID) | 3.6 A |
| Drain Current-Max (ID) | 3.6 A | Drain-source On Resistance-Max | 0.125 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | Feedback Cap-Max (Crss) | 5.3 pF |
| JESD-30 Code | R-PBGA-B3 | JESD-609 Code | e4 |
| Moisture Sensitivity Level | 1 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Operating Temperature-Min | -55 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | GRID ARRAY | Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL | Surface Mount | YES |
| Terminal Finish | NICKEL GOLD | Terminal Form | BUTT |
| Terminal Position | BOTTOM | Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
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Returns for refund: within 90 days
Returns for Exchange: within 90 days
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