CSD16323Q3C

Name: CSD16323Q3C
Brand: Texas Instruments
Rating: 4.5 (10 reviews)

Trans MOSFET N-CH 25V 21A 8-Pin SON EP T/R

Inventory:8,520

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N-Channel 25 V 21A (Ta), 60A (Tc) 3W (Ta) Surface Mount 8-SON-EP (3x3)

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series	CSD16323Q3C	Product Status	Obsolete
FET Type	N-Channel	Technology	Si
Drain to Source Voltage (Vdss)	25 V	Current - Continuous Drain (Id) @ 25°C	21A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	3V, 8V	Rds On (Max) @ Id, Vgs	4.5mOhm @ 24A, 8V
Vgs(th) (Max) @ Id	1.4V @ 250µA	Gate Charge (Qg) (Max) @ Vgs	8.4 nC @ 4.5 V
Vgs (Max)	+10V, -8V	Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 12.5 V
Power Dissipation (Max)	3W (Ta)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Supplier Device Package	8-SON-EP (3x3)
Package / Case	VSON-CLIP-8	Base Product Number	CSD16323
Manufacturer	Texas Instruments	Product Category	MOSFET
RoHS	Details	Mounting Style	SMD/SMT
Transistor Polarity	N-Channel	Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	25 V	Id - Continuous Drain Current	60 A
Rds On - Drain-Source Resistance	5.5 mOhms	Vgs - Gate-Source Voltage	- 8 V, + 10 V
Vgs th - Gate-Source Threshold Voltage	1.1 V	Qg - Gate Charge	6.2 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	3 W	Channel Mode	Enhancement
Tradename	NexFET	Brand	Texas Instruments
Configuration	Dual	Forward Transconductance - Min	108 S
Height	1.1 mm	Length	3.3 mm
Product Type	MOSFET	Factory Pack Quantity	2500
Subcategory	MOSFETs	Transistor Type	2 N-Channel
Width	3.3 mm	Unit Weight	0.001623 oz

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