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CSD13303W1015

Trans MOSFET N-CH 12V 3.5A 6-Pin DSBGA T/R

Inventory:8,551

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Overview of CSD13303W1015

The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra low profile.

Key Features

  • Ultra Low on Resistance
  • Ultra Low Qg and Qgd
  • Small Footprint
  • Low Profile 0.62 mm Height
  • Pb Free
  • RoHS Compliant
  • Halogen Free
  • CSP 1 × 1.5 mm Wafer Level Package

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Mfr Texas Instruments
Series NexFET™ Package Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 31A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 20mOhm @ 1.5A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 4.7 nC @ 4.5 V Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 715 pF @ 6 V FET Feature -
Power Dissipation (Max) 1.65W (Ta) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package 6-DSBGA (1x1.5)
Package / Case 6-UFBGA, DSBGA Base Product Number CSD13303

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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