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C3M0120100K

MOSFET 1000V 120mOhm G3 SiC MOSFET TO-247-4

Inventory:7,742

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Overview of C3M0120100K

MOSFET, N-CH, 1KV, 22A, TO-247-4; Transistor Polarity: N Channel; Continuous Drain Current Id: 22A; Drain Source Voltage Vds: 1kV; On Resistance Rds(on): 0.12ohm; Rds(on) Test Voltage Vgs: 15V; Threshold Voltage Vgs: 2.1V; Pow

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series C3M™ Package Tube
Product Status Active FET Type N-Channel
Technology SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc) Drive Voltage (Max Rds On, Min Rds On) 15V
Rds On (Max) @ Id, Vgs 155mOhm @ 15A, 15V Vgs(th) (Max) @ Id 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs 21.5 nC @ 15 V Vgs (Max) ±15V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 600 V Power Dissipation (Max) 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-247-4L Package / Case TO-247-4
Base Product Number C3M0120100

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