• BSS123-7-F SOT23-3
  • BSS123-7-F
BSS123-7-F SOT23-3
BSS123-7-F

BSS123-7-F

MODE FIELD EFFECT TRANSISTOR

Quantity Unit Price(USD) Ext. Price
20 $0.023 $0.46
200 $0.020 $4.00
600 $0.018 $10.80
3000 $0.017 $51.00
9000 $0.016 $144.00
21000 $0.015 $315.00

Inventory:6,129

*The price is for reference only.
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Overview of BSS123-7-F

The BSS123-7-F is a logic level enhancement mode field-effect transistor (FET) designed for low voltage, high-speed switching applications. This transistor features a low threshold voltage, making it suitable for interfacing with microcontrollers and other low-voltage digital circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Incorporate a circuit diagram illustrating the connections and operation of the BSS123-7-F transistor for a visual representation.

Key Features

  • Enhancement Mode FET: The BSS123-7-F is an enhancement mode FET, providing high-speed switching capabilities.
  • Low Threshold Voltage: Features a low threshold voltage, enabling efficient operation in low-voltage applications.
  • High-Speed Switching: Suitable for high-speed switching applications, such as digital circuits and PWM control.
  • Small Package: Available in a compact SOT-23 package, ideal for space-constrained designs.
  • Low ON Resistance: Offers low ON resistance for reduced power dissipation and improved efficiency.

Note: For detailed technical specifications, please refer to the BSS123-7-F datasheet.

Application

  • Low-Voltage Switching: Ideal for low-voltage switching applications in battery-powered devices and portable electronics.
  • Digital Circuits: Suitable for use in digital circuits requiring high-speed switching, such as level shifting and signal amplification.
  • Power Management: Used in power management circuits for efficient voltage regulation and load switching.

Functionality

The BSS123-7-F transistor is designed for high-speed, low-voltage switching applications. It provides efficient switching with its low threshold voltage, making it ideal for interfacing with microcontrollers and digital circuits.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the control signal for switching operations.
  • Drain and Source Connections: Connect the drain (D) and source (S) pins to the load circuit.

Frequently Asked Questions

Equivalent

For similar functionalities, consider these alternatives to the BSS123-7-F:

  • IRLML2402: A logic level enhancement mode FET with similar specifications to the BSS123-7-F.
  • 2N7002: This is another logic level enhancement mode FET commonly used in low-voltage switching applications.

BSS123-7-F

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 170 mA Rds On - Drain-Source Resistance 6 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 800 mV
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 300 mW Channel Mode Enhancement
Series BSS123 Brand Diodes Incorporated
Configuration Single Fall Time 8 ns
Forward Transconductance - Min 0.08 S Height 1 mm
Length 2.9 mm Product MOSFET Small Signals
Product Type MOSFET Rise Time 8 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type Enhancement Mode Field Effect Transistor
Typical Turn-Off Delay Time 13 ns Typical Turn-On Delay Time 8 ns
Width 1.3 mm Unit Weight 0.000282 oz

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