BSC026N08NS5ATMA1
Part number BSC026N08NS5ATMA1
Inventory:5,022
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : BSC026N08NS5ATMA1
-
Package/Case : PG-TDSON-8
-
Brands : INFINEON
-
Components Categories : MOSFET
-
Datesheet : BSC026N08NS5ATMA1 DataSheet (PDF)
Overview of BSC026N08NS5ATMA1
The BSC026N08NS5ATMA1 is a Power MOSFET transistor produced by Infineon Technologies AG. It is a N-channel enhancement mode device with a drain-source voltage (VDS) of 80V and a continuous drain current (ID) of 100A. The transistor is housed in a TO-252 package and has a low on-resistance of 2.6mΩ, making it suitable for a wide range of high power applications such as motor control, power supplies, and DC-DC converters.The BSC026N08NS5ATMA1 features a gate threshold voltage (VGS(th)) of 2V and a gate-source voltage (VGS) of ±20V, improving its compatibility with standard drive circuits. The transistor has a maximum junction temperature of 175°C and a thermal resistance junction-to-ambient of 62°C/W.The BSC026N08NS5ATMA1 is designed for high efficiency and reliability, with a rugged silicon design ensuring robust performance in harsh environments. Infineon's advanced packaging technology also enhances thermal performance, allowing for efficient heat dissipation during operation.
Key Features
- 800 V N-channel power MOSFET
- 8 mΩ max. on-state resistance
- 26 A continuous drain current
- 100% avalanche tested
- Low Qg and Qrr for high efficiency
- Optimized for synchronous rectification
- TO-220 package with low thermal resistance
Application
- Automotive
- Industrial
- Power management systems
- Motor control applications
- Robotics
- Renewable energy systems
- Battery management systems
- Electronic speed controllers
- Uninterruptible power supplies
- Switched-mode power supplies
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
functionalPacking | TAPE & REEL | addProductInfo | RoHS compliant, non dry |
packageNameMarketing | SuperSO8 5x6 | msl | 1 |
halogenFree | yes | customerInfo | STANDARD |
fgr | V76 | productClassification | ASP |
productStatusInfo | active and preferred | hfgr | A |
packageName | PG-TDSON-8 | pbFree | yes |
moistureProtPack | NON DRY | orderingCode | SP001154276 |
fourBlockPackageName | PG-TDSON-8-6 | rohsCompliant | yes |
opn | BSC026N08NS5ATMA1 | completelyPbFree | no |
sapMatnrSali | SP001154276 |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, SF, UPS, or DHL.UPS, or DHL.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA, MasterCard, UnionPay, Western Union, PayPal, and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
Similar Product
BSC110N15NS5ATMA1
TDSON-8 MOSFET, N-type, 150V, 76A, with low on-resistance
BSZ0902NSIATMA1
ROHS-compliant 30V N-Channel MOSFET with low on-resistance
BSS139H6327XTSA1
BSS139H6327XTSA1 is compliant with ROHS standards, ensuring it meets environmentally friendly requirements
BSC670N25NSFDATMA1
The BSC670N25NSFDATMA1 MOSFET has a power dissipation of 150W at 10V and a voltage drop of 4V at a current of 90uA
BSC098N10NS5ATMA1
100V power MOSFET with OptiMOS 5 technology
BSC039N06NSATMA1
Advanced Single N-Channel Power Mosfet with 60V Voltage Rating
BSC097N06NSATMA1
This product is a N-channel MOSFET transistor capable of handling up to 60 volts and 12 amps
BSC059N04LS6ATMA1
MOSFET Trench with a Voltage Threshold of 40V