• BFY81 TO-77
BFY81 TO-77

BFY81

Trans GP BJT NPN 45V 0.05A 500mW 6-Pin TO-77

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Overview of BFY81

The BFY81 is a silicon NPN high-frequency transistor designed for use in RF and high-frequency amplifier applications.This transistor offers high power gain and low noise performance,making it suitable for various radio frequency circuits.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • E:Emitter
  • B:Base
  • C:Collector

Circuit Diagram

Include a circuit diagram that showcases the implementation of the BFY81 transistor in RF amplifier circuits for better understanding.

Key Features

  • High Frequency Operation:The BFY81 is designed for high-frequency applications,providing reliable amplification in RF circuits.
  • High Power Gain:This transistor offers high power gain,ensuring efficient signal amplification in radio frequency systems.
  • Low Noise Figure:With its low noise performance,the BFY81 helps maintain signal integrity in high-frequency circuits.
  • Wide Operating Frequency Range:Suitable for a wide range of frequency applications,making it versatile for various RF amplifier designs.
  • Temperature Stability:The BFY81 exhibits good temperature stability,allowing for consistent performance across varying environmental conditions.

Note:For detailed technical specifications,please refer to the BFY81 datasheet.

Application

  • RF Amplification:Ideal for RF amplifier circuits in radio communication equipment and signal processing systems.
  • High-Frequency Circuits:Suitable for use in high-frequency circuits,including oscillators,mixers,and modulators.
  • Radio Systems:Deployed in radio systems for signal amplification and transmission purposes.

Functionality

The BFY81 transistor is utilized for signal amplification in high-frequency circuits,providing high power gain and low noise characteristics for reliable RF applications.

Usage Guide

  • Biasing:The base terminal must be biased correctly to ensure the transistor operates within its linear amplification region.
  • Matching:Proper impedance matching is crucial for maximizing the performance of the BFY81 in RF applications.
  • Heat Dissipation:Effective thermal management is essential to prevent overheating and maintain the transistor's longevity.

Frequently Asked Questions

Q:What is the maximum operating frequency of the BFY81 transistor?
A:The BFY81 is designed for high-frequency operation and can typically operate up to several gigahertz.

Q:Can the BFY81 be used in FM radio transmitter circuits?
A:Yes,the BFY81 is commonly employed in FM radio transmitter circuits for signal amplification and modulation.

Equivalent

For similar functionalities,consider these alternatives to the BFY81:

  • 2N5109:A high-frequency NPN transistor with characteristics similar to the BFY81 for RF amplifier applications.
  • MPF102:This is a JFET transistor that can be used in high-frequency circuits requiring low noise performance.

BFY81

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer TT Electronics Product Category Bipolar Transistors - BJT
Mounting Style Through Hole Package / Case TO-77-6
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 45 V Collector- Base Voltage VCBO 45 V
Emitter- Base Voltage VEBO 6 V Collector-Emitter Saturation Voltage 350 mV
Maximum DC Collector Current 10 mA Pd - Power Dissipation 500 mW
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 200 C
Brand Semelab / TT Electronics DC Collector/Base Gain hfe Min 60 at 10 uA, 5 V
Product Type BJTs - Bipolar Transistors Subcategory Transistors
Technology Si

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