BFY81
Trans GP BJT NPN 45V 0.05A 500mW 6-Pin TO-77
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Part Number : BFY81
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Package/Case : TO-77
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Brands : TT ELECTRONICS
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Components Categories : Single Bipolar Transistors
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Datesheet : BFY81 DataSheet (PDF)
The BFY81 is a silicon NPN high-frequency transistor designed for use in RF and high-frequency amplifier applications.This transistor offers high power gain and low noise performance,making it suitable for various radio frequency circuits. (Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.) Include a circuit diagram that showcases the implementation of the BFY81 transistor in RF amplifier circuits for better understanding. Note:For detailed technical specifications,please refer to the BFY81 datasheet. Functionality The BFY81 transistor is utilized for signal amplification in high-frequency circuits,providing high power gain and low noise characteristics for reliable RF applications. Usage Guide Q:What is the maximum operating frequency of the BFY81 transistor? Q:Can the BFY81 be used in FM radio transmitter circuits? For similar functionalities,consider these alternatives to the BFY81:Overview of BFY81
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A:The BFY81 is designed for high-frequency operation and can typically operate up to several gigahertz.
A:Yes,the BFY81 is commonly employed in FM radio transmitter circuits for signal amplification and modulation.Equivalent
![BFY81 BFY81](/files/uploads/product/b/10205f7c3b914074b55682adda476398.webp)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | TT Electronics | Product Category | Bipolar Transistors - BJT |
Mounting Style | Through Hole | Package / Case | TO-77-6 |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 45 V | Collector- Base Voltage VCBO | 45 V |
Emitter- Base Voltage VEBO | 6 V | Collector-Emitter Saturation Voltage | 350 mV |
Maximum DC Collector Current | 10 mA | Pd - Power Dissipation | 500 mW |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 200 C |
Brand | Semelab / TT Electronics | DC Collector/Base Gain hfe Min | 60 at 10 uA, 5 V |
Product Type | BJTs - Bipolar Transistors | Subcategory | Transistors |
Technology | Si |
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