• BC847BDW1T1G SC88-6
BC847BDW1T1G SC88-6

BC847BDW1T1G

BC847BDW1T1G boasts a dual NPN bipolar transistor design capable of handling up to 0

Quantity Unit Price(USD) Ext. Price
10 $0.045 $0.45
100 $0.036 $3.60
300 $0.032 $9.60
3000 $0.028 $84.00
6000 $0.026 $156.00
9000 $0.024 $216.00

Inventory:9,252

*The price is for reference only.
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  • Part Number : BC847BDW1T1G

  • Package/Case : SC88-6

  • Brands : Onsemi

  • Components Categories : Bipolar Transistor Arrays

  • Datesheet : BC847BDW1T1G DataSheet (PDF)

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Overview of BC847BDW1T1G

The BC847BDW1T1G is a general-purpose NPN transistor that is commonly used in amplification and switching applications. This transistor provides high current gain and low saturation voltage, making it suitable for a variety of circuit designs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the typical application of the BC847BDW1T1G transistor for better understanding.

Key Features

  • NPN Transistor: The BC847BDW1T1G is an NPN type transistor suitable for use in amplification and switching circuits.
  • High Current Gain: This transistor provides high current gain, allowing for small base currents to control larger collector currents.
  • Low Saturation Voltage: With low saturation voltage characteristics, the BC847BDW1T1G ensures efficient switching performance.
  • General-Purpose: The transistor is versatile and can be used in a wide range of electronic applications.

Note: For detailed technical specifications, please refer to the BC847BDW1T1G datasheet.

Application

  • Amplification: Ideal for amplification of electronic signals in audio and radio frequency circuits.
  • Switching: Suitable for use in digital and analog circuit designs for switching applications.
  • Signal Processing: Used in various signal processing circuits for amplification and filtering purposes.

Functionality

The BC847BDW1T1G NPN transistor is designed to amplify and switch electronic signals efficiently, making it a versatile component in electronics design.

Usage Guide

  • Pin Configuration: Connect the Emitter, Base, and Collector pins according to the circuit requirements.
  • Biasing: Ensure proper biasing of the transistor to achieve the desired amplification or switching characteristics.
  • Load Connection: Connect the collector of the transistor to the load circuit for amplification or switching action.

Equivalent

For similar functionalities, consider these alternatives to the BC847BDW1T1G:

  • 2N3904: This is a widely used NPN transistor with similar characteristics to the BC847BDW1T1G and suitable for general-purpose applications.
  • MMBT2222A: An SMD equivalent of the BC847BDW1T1G NPN transistor offering similar performance in a compact package.

BC847BDW1T1G

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SC-88-6 / SC-70-6 / SOT-363-6 Case Outline 419B-02
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target N Polarity Dual NPN
Type General Purpose VCE(sat) Max (V) 0.25
IC Cont. (A) 0.1 VCEO Min (V) 45
VCBO (V) 50 VEBO (V) 6
VBE(sat) (V) 0.7 VBE(on) (V) 0.66
hFE Min 200 hFE Max 450
fT Min (MHz) 100 PTM Max (W) 0.38
Pricing ($/Unit) $0.0219Sample

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