AUIRF5210STRL
INFINEON - AUIRF5210STRL - MOSFET Transistor, P Channel, 38 A, 100 V, 0.06 ohm, 10 V, 4 V
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Part Number : AUIRF5210STRL
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Package/Case : TO-263-3,D2PAK(2Leads+Tab),TO-263AB
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Brands : Infineon Technologies
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Components Categories : Single FETs, MOSFETs
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Datesheet : AUIRF5210STRL DataSheet (PDF)
Overview of AUIRF5210STRL
MOSFET, AEC-Q101, P-CH, -100V, TO-263; Transistor Polarity: P Channel; Continuous Drain Current Id: -38A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.06ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 170W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Series | HEXFET® | Product Status | Last Time Buy |
FET Type | P-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V | Current - Continuous Drain (Id) @ 25°C | 38A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 60mOhm @ 38A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 230 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 2780 pF @ 25 V |
Power Dissipation (Max) | 3.1W (Ta), 170W (Tc) | Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Base Product Number | AUIRF5210 |
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Warranty, Returns, and Additional Information
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