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ATF-54143-TR1G

BROADCOM LIMITED - ATF-54143-TR1G - MOSFET, RF, HEMT, SOT-343

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Overview of ATF-54143-TR1G

The ATF-54143-TR1G is a low noise enhancement mode pseudomorphic HEMT in a Surface-Mount Plastic Package. It is designed for applications requiring very low noise figure at moderately low levels of associated gain.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • S: Source
  • D: Drain
  • Noiseless: Noiseless pin for noise figure optimization
  • Noiseless: Noiseless pin for noise figure optimization
  • S: Source connected to a heat slug for optimum thermal performance

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the ATF-54143-TR1G for a visual representation.

Key Features

  • Low Noise Figure: Designed for very low noise figure applications.
  • Enhancement Mode: Features enhancement mode for improved performance.
  • Surface-Mount Package: Comes in a surface-mount plastic package for easy integration.
  • Pseudomorphic HEMT: Utilizes pseudomorphic HEMT technology for enhanced characteristics.

Note: For detailed technical specifications, please refer to the ATF-54143-TR1G datasheet.

Application

  • Low Noise Amplifiers: Suitable for use in low noise amplifier applications.
  • Radar Systems: Ideal for radar systems requiring very low noise performance.
  • Communication Systems: Used in communication systems where low noise is critical.

Functionality

The ATF-54143-TR1G is designed to provide low noise figure and moderate gain, making it perfect for applications demanding high sensitivity and low noise performance.

Usage Guide

  • Gate, Source, Drain Connections: Connect the pins G, S, and D as per the application requirements.
  • Noiseless Pin: Use the noiseless pins for noise figure optimization based on system requirements.
  • Thermal Consideration: Ensure proper thermal management by connecting the source pin to a heat slug for optimal performance.

Frequently Asked Questions

Q: What is the typical noise figure of the ATF-54143-TR1G?
A: The ATF-54143-TR1G typically offers a very low noise figure suitable for sensitive applications.

Q: Is the ATF-54143-TR1G suitable for high-frequency applications?
A: Yes, the ATF-54143-TR1G is designed for high-frequency applications requiring low noise performance.

Equivalent

For similar functionalities, consider these alternatives to the ATF-54143-TR1G:

  • ATF-54143: A similar low noise enhancement mode pseudomorphic HEMT with slightly different packaging options.
  • ATF-54143-BLKG: This variant offers enhanced shielding features for improved noise performance.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category RF JFET Transistors RoHS Details
Transistor Type EpHEMT Technology GaAs
Operating Frequency 2 GHz Gain 16.6 dB
Transistor Polarity N-Channel Vds - Drain-Source Breakdown Voltage 5 V
Vgs - Gate-Source Breakdown Voltage - 5 V to 1 V Id - Continuous Drain Current 120 mA
Maximum Operating Temperature + 150 C Pd - Power Dissipation 725 mW
Mounting Style SMD/SMT Package / Case SOT-343
Brand Broadcom / Avago Configuration Single Dual Source
Forward Transconductance - Min 410 mmho NF - Noise Figure 0.5 dB
P1dB - Compression Point 20.4 dBm Product RF JFET
Product Type RF JFET Transistors Factory Pack Quantity 3000
Subcategory Transistors Type GaAs EpHEMT

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