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APT56M50L

Trans MOSFET N-CH Si 500V 56A 3-Pin(3+Tab) TO-264 Tube

Inventory:7,073

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Quick Inquiry

Please submit RFQ for APT56M50L or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of APT56M50L

Power MOS 7® stands out as a top choice for low-loss, high-voltage power MOSFETs, addressing both conduction and switching losses by significantly reducing RDS(ON)and Qg. This family of transistors combines lower losses with lightning-fast switching speeds, ensuring optimal performance in various applications. Meanwhile, Power MOS V® continues to shine in certain scenarios by offering a balanced blend of performance and cost-efficiency with its low-resistance aluminum metal gate structure, enabling uniform high-speed switching across the chip

Key Features

    • Power Semiconductors, Power Modules and RF Power MOSFETs Catalog
    • Eliminating Parasitic Oscillation between Parallel MOSFETs
    • High Frequency Resonant Half Bridge
    • Improved Power MOSFETS Boost Efficiency IN A 3.5kw Single Phase PFC
    • Introduction to MOSFETs
    • Latest Technology PT IGBTs vs. Power MOSFETs
    • Making Use of Gate Charge Information In MOSFET and IGBT Data Sheets
    • Optimizing MOSFET and IGBT Gate Current to Minimize dv/dt Induced Failures in SMPS Circuits
    • Turn Off Snubber Design for High Frequency Modules
    • VDS(on) VCE(sat) Measurement

Application

PFC and other boost converter |Buck converter |Two switch forward (asymmetrical bridge) |Single switch forward |Flyback |Inverters

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Microchip Product Category MOSFET
RoHS Details Technology Si
Mounting Style Through Hole Package / Case TO-264-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 500 V Id - Continuous Drain Current 56 A
Rds On - Drain-Source Resistance 85 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 220 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 780 W Channel Mode Enhancement
Tradename Power MOS 8 Brand Microchip Technology
Fall Time 33 ns Forward Transconductance - Min 43 S
Height 5.21 mm Length 26.49 mm
Product Type MOSFET Rise Time 45 ns
Factory Pack Quantity 1 Subcategory MOSFETs
Typical Turn-Off Delay Time 100 ns Typical Turn-On Delay Time 38 ns
Width 20.5 mm Unit Weight 0.352740 oz

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Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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