6EDL04I06NT

DescriptionThe device 6ED family – 2nd generation is a full bridge driver to control power devices like MOS-transistors or IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. Based on the used SOI-technology there is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device. Hence, no parasitic latch-up may occur at all temperatures and voltage conditions.Main features• Thin-film-SOI-technology• Maximum blocking voltage +600V• Separate control circuits for all six drivers• CMOS and LSTTL compatible input (negative logic)• Signal interlocking of every phase to prevent cross-conduction• Detection of over current and under voltage supply• externally programmable delay for fault clear after over current detectionProduct highlights• Insensitivity of the bridge output to negative transient voltages up to -50V given by SOI-technology• Ultra fast bootstrap diodes (except 6ED003L06-C2)• shut down of all switches during error conditionsTypical applications• Home appliances• Fans, pumps• General purpose drives

Key Features

• Thin-film-SOI-technology
• Maximum blocking voltage +600V
• Separate control circuits for all six drivers
• CMOS and LSTTL compatible input (negative logic)
• Signal interlocking of every phase to prevent cross-conduction
• Detection of over current and under voltage supply
• externally programmable delay for fault clear after over current detection
• Product highlights
• Insensitivity of the bridge output to negative transient voltages up to -50V given by SOI-technology
• Ultra fast bootstrap diodes (except 6ED003L06-C2)
• shut down of all switches during error conditions